Abstract
A D-band heterodyne integrated imager, consisting of a mixer, an oscillator, an IF amplifier, and an IF detector, has been developed in a 65-nm CMOS technology. A measured responsivity of 720 kV/W and noise equivalent power (NEP) of 0.9 pW/Hz1/2 were obtained at 125 GHz. A total dc power of 74 mW was dissipated. The chip size is 1200 × 800 μ2 including contact pads and an input balun. A D-band image was acquired with the imager serving as a detector. A significant resolution enhancement was demonstrated with a near-field imaging achieved by a metal plate with a pinhole in the imaging setup.
Original language | English |
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Article number | 7017460 |
Pages (from-to) | 196-198 |
Number of pages | 3 |
Journal | IEEE Microwave and Wireless Components Letters |
Volume | 25 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2015 Mar 1 |
Bibliographical note
Publisher Copyright:© 2015 IEEE.
Keywords
- CMOS
- CMOS integrated circuit
- imaging
- receivers
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering