D-band heterodyne integrated imager in a 65-nm CMOS technology

Daekeun Yoon; Namhyung Kim; Kiryong Song; Jungsoo Kim; Seung Jae Oh; Jae Sung Rieh

doi:10.1109/LMWC.2015.2390496

D-band heterodyne integrated imager in a 65-nm CMOS technology

Daekeun Yoon, Namhyung Kim, Kiryong Song, Jungsoo Kim, Seung Jae Oh, Jae Sung Rieh

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

A D-band heterodyne integrated imager, consisting of a mixer, an oscillator, an IF amplifier, and an IF detector, has been developed in a 65-nm CMOS technology. A measured responsivity of 720 kV/W and noise equivalent power (NEP) of 0.9 pW/Hz^1/2 were obtained at 125 GHz. A total dc power of 74 mW was dissipated. The chip size is 1200 × 800 μ² including contact pads and an input balun. A D-band image was acquired with the imager serving as a detector. A significant resolution enhancement was demonstrated with a near-field imaging achieved by a metal plate with a pinhole in the imaging setup.

Original language	English
Article number	7017460
Pages (from-to)	196-198
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	25
Issue number	3
DOIs	https://doi.org/10.1109/LMWC.2015.2390496
Publication status	Published - 2015 Mar 1

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

CMOS
CMOS integrated circuit
imaging
receivers

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2015.2390496

Cite this

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abstract = "A D-band heterodyne integrated imager, consisting of a mixer, an oscillator, an IF amplifier, and an IF detector, has been developed in a 65-nm CMOS technology. A measured responsivity of 720 kV/W and noise equivalent power (NEP) of 0.9 pW/Hz1/2 were obtained at 125 GHz. A total dc power of 74 mW was dissipated. The chip size is 1200 × 800 μ2 including contact pads and an input balun. A D-band image was acquired with the imager serving as a detector. A significant resolution enhancement was demonstrated with a near-field imaging achieved by a metal plate with a pinhole in the imaging setup.",

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AU - Rieh, Jae Sung

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D-band heterodyne integrated imager in a 65-nm CMOS technology

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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