D-band heterodyne integrated imager in a 65-nm CMOS technology

Daekeun Yoon, Namhyung Kim, Kiryong Song, Jungsoo Kim, Seung Jae Oh, Jae Sung Rieh

    Research output: Contribution to journalArticlepeer-review

    14 Citations (Scopus)

    Abstract

    A D-band heterodyne integrated imager, consisting of a mixer, an oscillator, an IF amplifier, and an IF detector, has been developed in a 65-nm CMOS technology. A measured responsivity of 720 kV/W and noise equivalent power (NEP) of 0.9 pW/Hz1/2 were obtained at 125 GHz. A total dc power of 74 mW was dissipated. The chip size is 1200 × 800 μ2 including contact pads and an input balun. A D-band image was acquired with the imager serving as a detector. A significant resolution enhancement was demonstrated with a near-field imaging achieved by a metal plate with a pinhole in the imaging setup.

    Original languageEnglish
    Article number7017460
    Pages (from-to)196-198
    Number of pages3
    JournalIEEE Microwave and Wireless Components Letters
    Volume25
    Issue number3
    DOIs
    Publication statusPublished - 2015 Mar 1

    Bibliographical note

    Publisher Copyright:
    © 2015 IEEE.

    Keywords

    • CMOS
    • CMOS integrated circuit
    • imaging
    • receivers

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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