D-band heterodyne integrated imager in a 65-nm CMOS technology

Daekeun Yoon; Namhyung Kim; Kiryong Song; Jungsoo Kim; Seung Jae Oh; Jae Sung Rieh

doi:10.1109/LMWC.2015.2390496

D-band heterodyne integrated imager in a 65-nm CMOS technology

Daekeun Yoon
, Namhyung Kim
, Kiryong Song
, Jungsoo Kim
, Seung Jae Oh
, Jae Sung Rieh

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

A D-band heterodyne integrated imager, consisting of a mixer, an oscillator, an IF amplifier, and an IF detector, has been developed in a 65-nm CMOS technology. A measured responsivity of 720 kV/W and noise equivalent power (NEP) of 0.9 pW/Hz^1/2 were obtained at 125 GHz. A total dc power of 74 mW was dissipated. The chip size is 1200 × 800 μ² including contact pads and an input balun. A D-band image was acquired with the imager serving as a detector. A significant resolution enhancement was demonstrated with a near-field imaging achieved by a metal plate with a pinhole in the imaging setup.

Original language	English
Article number	7017460
Pages (from-to)	196-198
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	25
Issue number	3
DOIs	https://doi.org/10.1109/LMWC.2015.2390496
Publication status	Published - 2015 Mar 1

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

CMOS
CMOS integrated circuit
imaging
receivers

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/LMWC.2015.2390496

Cite this

@article{e2cfddaef910430da823afd3d83c43aa,

title = "D-band heterodyne integrated imager in a 65-nm CMOS technology",

abstract = "A D-band heterodyne integrated imager, consisting of a mixer, an oscillator, an IF amplifier, and an IF detector, has been developed in a 65-nm CMOS technology. A measured responsivity of 720 kV/W and noise equivalent power (NEP) of 0.9 pW/Hz1/2 were obtained at 125 GHz. A total dc power of 74 mW was dissipated. The chip size is 1200 × 800 μ2 including contact pads and an input balun. A D-band image was acquired with the imager serving as a detector. A significant resolution enhancement was demonstrated with a near-field imaging achieved by a metal plate with a pinhole in the imaging setup.",

keywords = "CMOS, CMOS integrated circuit, imaging, receivers",

author = "Daekeun Yoon and Namhyung Kim and Kiryong Song and Jungsoo Kim and Oh, \{Seung Jae\} and Rieh, \{Jae Sung\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

month = mar,

day = "1",

doi = "10.1109/LMWC.2015.2390496",

language = "English",

volume = "25",

pages = "196--198",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - D-band heterodyne integrated imager in a 65-nm CMOS technology

AU - Yoon, Daekeun

AU - Kim, Namhyung

AU - Song, Kiryong

AU - Kim, Jungsoo

AU - Oh, Seung Jae

AU - Rieh, Jae Sung

PY - 2015/3/1

Y1 - 2015/3/1

N2 - A D-band heterodyne integrated imager, consisting of a mixer, an oscillator, an IF amplifier, and an IF detector, has been developed in a 65-nm CMOS technology. A measured responsivity of 720 kV/W and noise equivalent power (NEP) of 0.9 pW/Hz1/2 were obtained at 125 GHz. A total dc power of 74 mW was dissipated. The chip size is 1200 × 800 μ2 including contact pads and an input balun. A D-band image was acquired with the imager serving as a detector. A significant resolution enhancement was demonstrated with a near-field imaging achieved by a metal plate with a pinhole in the imaging setup.

AB - A D-band heterodyne integrated imager, consisting of a mixer, an oscillator, an IF amplifier, and an IF detector, has been developed in a 65-nm CMOS technology. A measured responsivity of 720 kV/W and noise equivalent power (NEP) of 0.9 pW/Hz1/2 were obtained at 125 GHz. A total dc power of 74 mW was dissipated. The chip size is 1200 × 800 μ2 including contact pads and an input balun. A D-band image was acquired with the imager serving as a detector. A significant resolution enhancement was demonstrated with a near-field imaging achieved by a metal plate with a pinhole in the imaging setup.

KW - CMOS

KW - CMOS integrated circuit

KW - imaging

KW - receivers

UR - https://www.scopus.com/pages/publications/85027928180

U2 - 10.1109/LMWC.2015.2390496

DO - 10.1109/LMWC.2015.2390496

M3 - Article

AN - SCOPUS:85027928180

SN - 1531-1309

VL - 25

SP - 196

EP - 198

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 3

M1 - 7017460

ER -

D-band heterodyne integrated imager in a 65-nm CMOS technology

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this