D-band stacked amplifiers based on SiGe BiCMOS technology

Jongwon Yun, Hyunchul Kim, Kiryong Song, Jae Sung Rieh

Research output: Contribution to journalArticlepeer-review


This paper presents two 3-stage D-band stacked amplifiers developed in a 0.13-μm SiGe BiCMOS technology, employed to compare the conventional cascode topology and the common-base (CB)/CB stacked topology. AMP1 employs two cascode stages followed by a CB/CB stacked stage, while AMP2 is composed of three CB/CB stacked stages. AMP1 showed a 17.1 dB peak gain at 143.8 GHz and a saturation output power of -4.2 dBm, while AMP2 showed a 20.4 dB peak gain at 150.6 GHz and a saturation output power of -1.3 dBm. The respective power dissipation was 42.9 mW and 59.4 mW for the two amplifiers. The results show that CB/CB stacked topology is favored over cascode topology in terms of gain near 140 GHz.

Original languageEnglish
Pages (from-to)277-279
Number of pages3
JournalJournal of Semiconductor Technology and Science
Issue number2
Publication statusPublished - 2015 Apr 1

Bibliographical note

Publisher Copyright:
©Institute of Electronics Engineers of Korea. All rights reserved.


  • Cascode
  • Common emitter
  • Common-base
  • D-band
  • SiGe HBT
  • Stacked

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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