Damage-Free Plasma Etching to Enhance Performance of AlGaInP-Based Micro-Light Emitting Diode

Sang Youl Lee, Eunduk Lee, Ji Hyung Moon, Byoungjun Choi, Jeong Tak Oh, Hwan Hee Jeong, Tae Yeon Seong, Hiroshi Amano

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We investigated the effect of plasma-etching on the electrical and optical performance of lateral AlGaInP-based red micro-LEDs as a function of etching time, where plasma-etched Ag particles were used as masks. For the sample etched for 12 s, around 33% of the sample surface were randomly etched, whereas for the sample etched for 24 s, nearly 60% were randomly etched with additional nanoscale hillocks. Regardless of etching times, all samples exhibited similar forward voltages of 1.944-1.929 V at $20~\mu \text{A}$ and reverse leakage currents of $1\times 10^{-8}$ A at -10 V. The micro-LEDs fabricated with 12 s-etched and 24 s-etched $p$ -GaP gave 26.2% and 42.3% higher light output powers at $20~\mu \text{A}$ , respectively, than the one with unetched $p$ -GaP. The $S$ parameter decreased with increasing forward current and etching time. The electroluminescence (EL) peak intensities of the micro-LEDs were consistent with their light output performance and included shoulder peaks at 612 nm. Emission images showed that the micro-LEDs with the 24 s-etched $p$ -GaP revealed the most intense and uniform emission area among the three samples.

Original languageEnglish
Article number9146513
Pages (from-to)1041-1044
Number of pages4
JournalIEEE Photonics Technology Letters
Volume32
Issue number17
DOIs
Publication statusPublished - 2020 Sept 1

Bibliographical note

Funding Information:
Manuscript received April 14, 2020; revised June 29, 2020; accepted July 17, 2020. Date of publication July 23, 2020; date of current version July 31, 2020. This work was supported by the Global Research Laboratory program through the National Research Foundation (NRF) of Korea funded by the Ministry of Science and ICT under Grant NRF-2017K1A1A2013160. (Corresponding author: Tae-Yeon Seong.) Sang-Youl Lee is with the Department of Nanophotonics, Korea University, Seoul 02841, South Korea, and also with the Chip Development Group, LG Innotek, Gyeonggi 10842, South Korea. Eunduk Lee is with LCSQUARE Co., Suwon 16229, South Korea.

Funding Information:
This work was supported by the Global Research Laboratory program through the National Research Foundation (NRF) of Korea funded by the Ministry of Science and ICT under Grant NRF-2017K1A1A2013160.

Publisher Copyright:
© 1989-2012 IEEE.

Keywords

  • Ag particle
  • AlGaInP
  • Micro-light emitting diode
  • plasmaetching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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