Decimal tunneling magnetoresistance states in Fe/GaAlAs/GaMnAs magnetic tunnel junction

Taehee Yoo; Sanghoon Lee; Xinyu Liu; Jacek K. Furdyna; Dong Uk Lee; Eun Kyu Kim

doi:10.1109/TMAG.2014.2321533

Decimal tunneling magnetoresistance states in Fe/GaAlAs/GaMnAs magnetic tunnel junction

Taehee Yoo, Sanghoon Lee, Xinyu Liu, Jacek K. Furdyna, Dong Uk Lee, Eun Kyu Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report the realization of ten stable tunneling magnetoresistance (TMR) states in a single device. To achieve ten resistance states, we have used a magnetic tunnel junction (MTJ) structure that consists of two magnetic layers, which are Fe and GaMnAs ferromagnetic layers. Owing to the two in-plane magnetic easy axes that result from strong cubic anisotropies in both Fe and GaMnAs layers, noncollinear magnetic configurations between two magnetic layers were realized, in addition to the parallel and antiparallel configurations. Such noncollinear magnetic configurations provide stable intermediate TMR values between two extreme values corresponding parallel and antiparallel configurations. The number of stable TMR values was further increased by forming multidomain structures in the MTJ structure. We demonstrate that we can obtain up to ten stable TMR values, and they can be controlled by applying the appropriate magnetic field sequences.

Original language	English
Article number	6971748
Journal	IEEE Transactions on Magnetics
Volume	50
Issue number	11
DOIs	https://doi.org/10.1109/TMAG.2014.2321533
Publication status	Published - 2014 Nov 1

Keywords

Magnetic multilayers
multivalued memory device
tunneling magnetoresistance (TMR).

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2014.2321533

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@article{3865d8946b224d8c8934d8dd88bcc962,

title = "Decimal tunneling magnetoresistance states in Fe/GaAlAs/GaMnAs magnetic tunnel junction",

abstract = "We report the realization of ten stable tunneling magnetoresistance (TMR) states in a single device. To achieve ten resistance states, we have used a magnetic tunnel junction (MTJ) structure that consists of two magnetic layers, which are Fe and GaMnAs ferromagnetic layers. Owing to the two in-plane magnetic easy axes that result from strong cubic anisotropies in both Fe and GaMnAs layers, noncollinear magnetic configurations between two magnetic layers were realized, in addition to the parallel and antiparallel configurations. Such noncollinear magnetic configurations provide stable intermediate TMR values between two extreme values corresponding parallel and antiparallel configurations. The number of stable TMR values was further increased by forming multidomain structures in the MTJ structure. We demonstrate that we can obtain up to ten stable TMR values, and they can be controlled by applying the appropriate magnetic field sequences.",

keywords = "Magnetic multilayers, multivalued memory device, tunneling magnetoresistance (TMR).",

author = "Taehee Yoo and Sanghoon Lee and Xinyu Liu and Furdyna, {Jacek K.} and Lee, {Dong Uk} and Kim, {Eun Kyu}",

note = "Publisher Copyright: {\textcopyright} 1965-2012 IEEE.",

year = "2014",

month = nov,

day = "1",

doi = "10.1109/TMAG.2014.2321533",

language = "English",

volume = "50",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Decimal tunneling magnetoresistance states in Fe/GaAlAs/GaMnAs magnetic tunnel junction

AU - Yoo, Taehee

AU - Lee, Sanghoon

AU - Liu, Xinyu

AU - Furdyna, Jacek K.

AU - Lee, Dong Uk

AU - Kim, Eun Kyu

PY - 2014/11/1

Y1 - 2014/11/1

N2 - We report the realization of ten stable tunneling magnetoresistance (TMR) states in a single device. To achieve ten resistance states, we have used a magnetic tunnel junction (MTJ) structure that consists of two magnetic layers, which are Fe and GaMnAs ferromagnetic layers. Owing to the two in-plane magnetic easy axes that result from strong cubic anisotropies in both Fe and GaMnAs layers, noncollinear magnetic configurations between two magnetic layers were realized, in addition to the parallel and antiparallel configurations. Such noncollinear magnetic configurations provide stable intermediate TMR values between two extreme values corresponding parallel and antiparallel configurations. The number of stable TMR values was further increased by forming multidomain structures in the MTJ structure. We demonstrate that we can obtain up to ten stable TMR values, and they can be controlled by applying the appropriate magnetic field sequences.

AB - We report the realization of ten stable tunneling magnetoresistance (TMR) states in a single device. To achieve ten resistance states, we have used a magnetic tunnel junction (MTJ) structure that consists of two magnetic layers, which are Fe and GaMnAs ferromagnetic layers. Owing to the two in-plane magnetic easy axes that result from strong cubic anisotropies in both Fe and GaMnAs layers, noncollinear magnetic configurations between two magnetic layers were realized, in addition to the parallel and antiparallel configurations. Such noncollinear magnetic configurations provide stable intermediate TMR values between two extreme values corresponding parallel and antiparallel configurations. The number of stable TMR values was further increased by forming multidomain structures in the MTJ structure. We demonstrate that we can obtain up to ten stable TMR values, and they can be controlled by applying the appropriate magnetic field sequences.

KW - Magnetic multilayers

KW - multivalued memory device

KW - tunneling magnetoresistance (TMR).

UR - http://www.scopus.com/inward/record.url?scp=84916239732&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2014.2321533

DO - 10.1109/TMAG.2014.2321533

M3 - Article

AN - SCOPUS:84916239732

SN - 0018-9464

VL - 50

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 11

M1 - 6971748

ER -

Decimal tunneling magnetoresistance states in Fe/GaAlAs/GaMnAs magnetic tunnel junction

Abstract

Keywords

ASJC Scopus subject areas

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