Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes

In Hwan Lee; A. Y. Polyakov; N. B. Smirnov; I. V. Shchemerov; Tae Hoon Chung; P. B. Lagov; R. A. Zinov’ev; S. J. Pearton

doi:10.1149/2.0131710jss

Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes

In Hwan Lee, A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, Tae Hoon Chung, P. B. Lagov, R. A. Zinov’ev, S. J. Pearton

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Deep electron and hole trap spectra and electroluminescence (EL) efficiency of green multi-quantum-well (MQW) GaN/InGaN light emitting diodes were measured before and after 6 MeV electron irradiation. Starting with a fluence of 5 × 10¹⁵ cm⁻², electron irradiation increased the concentration of existing electron traps with levels at E_c−0.5 eV and introduced new electron traps with levels near E_c−1 eV. The latter are the well known radiation defects formed in the GaN barriers of the GaN/InGaN MQW region. The degradation of the EL efficiency after irradiation correlates with changes of the E_c−0.5 eV and E_c−1 eV electron trap density, suggesting these are effective non-radiative recombination centers. By sharp contrast, the concentration of the dominant hole traps with levels near E_v+0.45 eV decreased after, which eliminates these from the role of Shockley-Read-Hall defects actively participating in recombination.

Original language	English
Pages (from-to)	Q127-Q131
Journal	ECS Journal of Solid State Science and Technology
Volume	6
Issue number	10
DOIs	https://doi.org/10.1149/2.0131710jss
Publication status	Published - 2017

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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@article{fc0945c89826470397c5215e4083ad9b,

title = "Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes",

abstract = "Deep electron and hole trap spectra and electroluminescence (EL) efficiency of green multi-quantum-well (MQW) GaN/InGaN light emitting diodes were measured before and after 6 MeV electron irradiation. Starting with a fluence of 5 × 1015 cm−2, electron irradiation increased the concentration of existing electron traps with levels at Ec−0.5 eV and introduced new electron traps with levels near Ec−1 eV. The latter are the well known radiation defects formed in the GaN barriers of the GaN/InGaN MQW region. The degradation of the EL efficiency after irradiation correlates with changes of the Ec−0.5 eV and Ec−1 eV electron trap density, suggesting these are effective non-radiative recombination centers. By sharp contrast, the concentration of the dominant hole traps with levels near Ev+0.45 eV decreased after, which eliminates these from the role of Shockley-Read-Hall defects actively participating in recombination.",

author = "Lee, {In Hwan} and Polyakov, {A. Y.} and Smirnov, {N. B.} and Shchemerov, {I. V.} and Chung, {Tae Hoon} and Lagov, {P. B.} and Zinov{\textquoteright}ev, {R. A.} and Pearton, {S. J.}",

note = "Funding Information: The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST(MISiS) (K2-2014-055). The work at Korea University was supported by National Research Foundation of Korea (NRF) funded by Ministry of Science, ICT & Future Planning (2017R1A2B3006141). The work at UF was supported by DTRA grant HDTRA1-17-1-0011. Publisher Copyright: {\textcopyright} 2017 The Electrochemical Society. All rights reserved.",

year = "2017",

doi = "10.1149/2.0131710jss",

language = "English",

volume = "6",

pages = "Q127--Q131",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

number = "10",

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TY - JOUR

T1 - Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes

AU - Lee, In Hwan

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Shchemerov, I. V.

AU - Chung, Tae Hoon

AU - Lagov, P. B.

AU - Zinov’ev, R. A.

AU - Pearton, S. J.

N1 - Funding Information: The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST(MISiS) (K2-2014-055). The work at Korea University was supported by National Research Foundation of Korea (NRF) funded by Ministry of Science, ICT & Future Planning (2017R1A2B3006141). The work at UF was supported by DTRA grant HDTRA1-17-1-0011. Publisher Copyright: © 2017 The Electrochemical Society. All rights reserved.

PY - 2017

Y1 - 2017

N2 - Deep electron and hole trap spectra and electroluminescence (EL) efficiency of green multi-quantum-well (MQW) GaN/InGaN light emitting diodes were measured before and after 6 MeV electron irradiation. Starting with a fluence of 5 × 1015 cm−2, electron irradiation increased the concentration of existing electron traps with levels at Ec−0.5 eV and introduced new electron traps with levels near Ec−1 eV. The latter are the well known radiation defects formed in the GaN barriers of the GaN/InGaN MQW region. The degradation of the EL efficiency after irradiation correlates with changes of the Ec−0.5 eV and Ec−1 eV electron trap density, suggesting these are effective non-radiative recombination centers. By sharp contrast, the concentration of the dominant hole traps with levels near Ev+0.45 eV decreased after, which eliminates these from the role of Shockley-Read-Hall defects actively participating in recombination.

AB - Deep electron and hole trap spectra and electroluminescence (EL) efficiency of green multi-quantum-well (MQW) GaN/InGaN light emitting diodes were measured before and after 6 MeV electron irradiation. Starting with a fluence of 5 × 1015 cm−2, electron irradiation increased the concentration of existing electron traps with levels at Ec−0.5 eV and introduced new electron traps with levels near Ec−1 eV. The latter are the well known radiation defects formed in the GaN barriers of the GaN/InGaN MQW region. The degradation of the EL efficiency after irradiation correlates with changes of the Ec−0.5 eV and Ec−1 eV electron trap density, suggesting these are effective non-radiative recombination centers. By sharp contrast, the concentration of the dominant hole traps with levels near Ev+0.45 eV decreased after, which eliminates these from the role of Shockley-Read-Hall defects actively participating in recombination.

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DO - 10.1149/2.0131710jss

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JO - ECS Journal of Solid State Science and Technology

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Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes

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