Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes

In Hwan Lee, A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, Tae Hoon Chung, P. B. Lagov, R. A. Zinov’ev, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Deep electron and hole trap spectra and electroluminescence (EL) efficiency of green multi-quantum-well (MQW) GaN/InGaN light emitting diodes were measured before and after 6 MeV electron irradiation. Starting with a fluence of 5 × 1015 cm−2, electron irradiation increased the concentration of existing electron traps with levels at Ec−0.5 eV and introduced new electron traps with levels near Ec−1 eV. The latter are the well known radiation defects formed in the GaN barriers of the GaN/InGaN MQW region. The degradation of the EL efficiency after irradiation correlates with changes of the Ec−0.5 eV and Ec−1 eV electron trap density, suggesting these are effective non-radiative recombination centers. By sharp contrast, the concentration of the dominant hole traps with levels near Ev+0.45 eV decreased after, which eliminates these from the role of Shockley-Read-Hall defects actively participating in recombination.

Original languageEnglish
Pages (from-to)Q127-Q131
JournalECS Journal of Solid State Science and Technology
Issue number10
Publication statusPublished - 2017

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


Dive into the research topics of 'Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes'. Together they form a unique fingerprint.

Cite this