Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes

In Hwan Lee; A. Y. Polyakov; N. B. Smirnov; I. V. Shchemerov; Tae Hoon Chung; P. B. Lagov; R. A. Zinov’ev; S. J. Pearton

doi:10.1149/2.0131710jss

Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes

In Hwan Lee
, A. Y. Polyakov
, N. B. Smirnov
, I. V. Shchemerov
, Tae Hoon Chung
, P. B. Lagov
, R. A. Zinov’ev
, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Deep electron and hole trap spectra and electroluminescence (EL) efficiency of green multi-quantum-well (MQW) GaN/InGaN light emitting diodes were measured before and after 6 MeV electron irradiation. Starting with a fluence of 5 × 10¹⁵ cm⁻², electron irradiation increased the concentration of existing electron traps with levels at E_c−0.5 eV and introduced new electron traps with levels near E_c−1 eV. The latter are the well known radiation defects formed in the GaN barriers of the GaN/InGaN MQW region. The degradation of the EL efficiency after irradiation correlates with changes of the E_c−0.5 eV and E_c−1 eV electron trap density, suggesting these are effective non-radiative recombination centers. By sharp contrast, the concentration of the dominant hole traps with levels near E_v+0.45 eV decreased after, which eliminates these from the role of Shockley-Read-Hall defects actively participating in recombination.

Original language	English
Pages (from-to)	Q127-Q131
Journal	ECS Journal of Solid State Science and Technology
Volume	6
Issue number	10
DOIs	https://doi.org/10.1149/2.0131710jss
Publication status	Published - 2017

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Publisher Copyright:
© 2017 The Electrochemical Society. All rights reserved.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1149/2.0131710jss

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@article{fc0945c89826470397c5215e4083ad9b,

title = "Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes",

abstract = "Deep electron and hole trap spectra and electroluminescence (EL) efficiency of green multi-quantum-well (MQW) GaN/InGaN light emitting diodes were measured before and after 6 MeV electron irradiation. Starting with a fluence of 5 × 1015 cm−2, electron irradiation increased the concentration of existing electron traps with levels at Ec−0.5 eV and introduced new electron traps with levels near Ec−1 eV. The latter are the well known radiation defects formed in the GaN barriers of the GaN/InGaN MQW region. The degradation of the EL efficiency after irradiation correlates with changes of the Ec−0.5 eV and Ec−1 eV electron trap density, suggesting these are effective non-radiative recombination centers. By sharp contrast, the concentration of the dominant hole traps with levels near Ev+0.45 eV decreased after, which eliminates these from the role of Shockley-Read-Hall defects actively participating in recombination.",

author = "Lee, \{In Hwan\} and Polyakov, \{A. Y.\} and Smirnov, \{N. B.\} and Shchemerov, \{I. V.\} and Chung, \{Tae Hoon\} and Lagov, \{P. B.\} and Zinov{\textquoteright}ev, \{R. A.\} and Pearton, \{S. J.\}",

year = "2017",

doi = "10.1149/2.0131710jss",

language = "English",

volume = "6",

pages = "Q127--Q131",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society Inc.",

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TY - JOUR

T1 - Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes

AU - Lee, In Hwan

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Shchemerov, I. V.

AU - Chung, Tae Hoon

AU - Lagov, P. B.

AU - Zinov’ev, R. A.

AU - Pearton, S. J.

PY - 2017

Y1 - 2017

N2 - Deep electron and hole trap spectra and electroluminescence (EL) efficiency of green multi-quantum-well (MQW) GaN/InGaN light emitting diodes were measured before and after 6 MeV electron irradiation. Starting with a fluence of 5 × 1015 cm−2, electron irradiation increased the concentration of existing electron traps with levels at Ec−0.5 eV and introduced new electron traps with levels near Ec−1 eV. The latter are the well known radiation defects formed in the GaN barriers of the GaN/InGaN MQW region. The degradation of the EL efficiency after irradiation correlates with changes of the Ec−0.5 eV and Ec−1 eV electron trap density, suggesting these are effective non-radiative recombination centers. By sharp contrast, the concentration of the dominant hole traps with levels near Ev+0.45 eV decreased after, which eliminates these from the role of Shockley-Read-Hall defects actively participating in recombination.

AB - Deep electron and hole trap spectra and electroluminescence (EL) efficiency of green multi-quantum-well (MQW) GaN/InGaN light emitting diodes were measured before and after 6 MeV electron irradiation. Starting with a fluence of 5 × 1015 cm−2, electron irradiation increased the concentration of existing electron traps with levels at Ec−0.5 eV and introduced new electron traps with levels near Ec−1 eV. The latter are the well known radiation defects formed in the GaN barriers of the GaN/InGaN MQW region. The degradation of the EL efficiency after irradiation correlates with changes of the Ec−0.5 eV and Ec−1 eV electron trap density, suggesting these are effective non-radiative recombination centers. By sharp contrast, the concentration of the dominant hole traps with levels near Ev+0.45 eV decreased after, which eliminates these from the role of Shockley-Read-Hall defects actively participating in recombination.

UR - https://www.scopus.com/pages/publications/85033792210

U2 - 10.1149/2.0131710jss

DO - 10.1149/2.0131710jss

M3 - Article

AN - SCOPUS:85033792210

SN - 2162-8769

VL - 6

SP - Q127-Q131

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 10

ER -

Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes

Abstract

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