Deep electron and hole traps in neutron transmutation doped n-GaN

In Hwan Lee; A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; E. A. Kozhukhova; N. G. Kolin; V. M. Boiko; A. V. Korulin; S. J. Pearton

doi:10.1116/1.3596571

Deep electron and hole traps in neutron transmutation doped n-GaN

In Hwan Lee, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, N. G. Kolin, V. M. Boiko, A. V. Korulin, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

In neutron transmutation doped n-GaN, the electrical properties are found to be dominated not by shallow Ge donors produced by interaction of thermal neutrons with Ga, but by electron traps at 0.45 or 0.2 eV. The traps switch from the former to the latter when the anneal temperature increased from 800 to 1000 °C. The concentrations of both traps rose linearly with neutron fluence and were close to the concentration of Ge donors, suggesting they are Ge complexed with different radiation defects. The authors note the similarity of the properties of these traps to the properties of the dominant electron traps in as-irradiated n-GaN. They also observed prominent hole traps with a level near E_v +1.2 eV. These traps were not detected in virgin or as-irradiated samples. The concentration of the 1.2 eV hole traps increased linearly with neutron fluence, and these traps were assigned to Ga vacancy complexes with oxygen.

Original language	English
Article number	041201
Journal	Journal of Vacuum Science and Technology B
Volume	29
Issue number	4
DOIs	https://doi.org/10.1116/1.3596571
Publication status	Published - 2011 Jul
Externally published	Yes

Bibliographical note

Funding Information:
The work at IRM was supported in part by the International Science and Technology Center ICTS Grant No. 3870. A.Y.P. acknowledges support from the Brain Pool Program of Korean Government during his stay at Chonbuk National University. The work at UF is partially funded by HDTRA (Don Silversmith) under contract U.S. DOD HDTRA Grant No. 1-11-1-0020.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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@article{474de66a645e4b45994213db5c8a12d2,

title = "Deep electron and hole traps in neutron transmutation doped n-GaN",

abstract = "In neutron transmutation doped n-GaN, the electrical properties are found to be dominated not by shallow Ge donors produced by interaction of thermal neutrons with Ga, but by electron traps at 0.45 or 0.2 eV. The traps switch from the former to the latter when the anneal temperature increased from 800 to 1000 °C. The concentrations of both traps rose linearly with neutron fluence and were close to the concentration of Ge donors, suggesting they are Ge complexed with different radiation defects. The authors note the similarity of the properties of these traps to the properties of the dominant electron traps in as-irradiated n-GaN. They also observed prominent hole traps with a level near Ev +1.2 eV. These traps were not detected in virgin or as-irradiated samples. The concentration of the 1.2 eV hole traps increased linearly with neutron fluence, and these traps were assigned to Ga vacancy complexes with oxygen.",

author = "Lee, {In Hwan} and Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Kozhukhova, {E. A.} and Kolin, {N. G.} and Boiko, {V. M.} and Korulin, {A. V.} and Pearton, {S. J.}",

note = "Funding Information: The work at IRM was supported in part by the International Science and Technology Center ICTS Grant No. 3870. A.Y.P. acknowledges support from the Brain Pool Program of Korean Government during his stay at Chonbuk National University. The work at UF is partially funded by HDTRA (Don Silversmith) under contract U.S. DOD HDTRA Grant No. 1-11-1-0020.",

year = "2011",

month = jul,

doi = "10.1116/1.3596571",

language = "English",

volume = "29",

journal = "Journal of Vacuum Science and Technology B",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - Deep electron and hole traps in neutron transmutation doped n-GaN

AU - Lee, In Hwan

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kozhukhova, E. A.

AU - Kolin, N. G.

AU - Boiko, V. M.

AU - Korulin, A. V.

AU - Pearton, S. J.

N1 - Funding Information: The work at IRM was supported in part by the International Science and Technology Center ICTS Grant No. 3870. A.Y.P. acknowledges support from the Brain Pool Program of Korean Government during his stay at Chonbuk National University. The work at UF is partially funded by HDTRA (Don Silversmith) under contract U.S. DOD HDTRA Grant No. 1-11-1-0020.

PY - 2011/7

Y1 - 2011/7

N2 - In neutron transmutation doped n-GaN, the electrical properties are found to be dominated not by shallow Ge donors produced by interaction of thermal neutrons with Ga, but by electron traps at 0.45 or 0.2 eV. The traps switch from the former to the latter when the anneal temperature increased from 800 to 1000 °C. The concentrations of both traps rose linearly with neutron fluence and were close to the concentration of Ge donors, suggesting they are Ge complexed with different radiation defects. The authors note the similarity of the properties of these traps to the properties of the dominant electron traps in as-irradiated n-GaN. They also observed prominent hole traps with a level near Ev +1.2 eV. These traps were not detected in virgin or as-irradiated samples. The concentration of the 1.2 eV hole traps increased linearly with neutron fluence, and these traps were assigned to Ga vacancy complexes with oxygen.

AB - In neutron transmutation doped n-GaN, the electrical properties are found to be dominated not by shallow Ge donors produced by interaction of thermal neutrons with Ga, but by electron traps at 0.45 or 0.2 eV. The traps switch from the former to the latter when the anneal temperature increased from 800 to 1000 °C. The concentrations of both traps rose linearly with neutron fluence and were close to the concentration of Ge donors, suggesting they are Ge complexed with different radiation defects. The authors note the similarity of the properties of these traps to the properties of the dominant electron traps in as-irradiated n-GaN. They also observed prominent hole traps with a level near Ev +1.2 eV. These traps were not detected in virgin or as-irradiated samples. The concentration of the 1.2 eV hole traps increased linearly with neutron fluence, and these traps were assigned to Ga vacancy complexes with oxygen.

UR - http://www.scopus.com/inward/record.url?scp=80051891515&partnerID=8YFLogxK

U2 - 10.1116/1.3596571

DO - 10.1116/1.3596571

M3 - Article

AN - SCOPUS:80051891515

SN - 2166-2746

VL - 29

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

IS - 4

M1 - 041201

ER -

Deep electron and hole traps in neutron transmutation doped n-GaN

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