Abstract
Deep traps spectra are compared forGaN/InGaN light emitting diodeswith andwithout a template embeddedwith SiO2 nanoparticles underlying the active multiple quantum well region. The structures with SiO2 nanoparticles show a higher internal quantum efficiency which correlates with a lower concentration of deep traps with level near Ec-0.6 eV as compared to reference structures. We discuss complications in deep traps analysis coming from the freeze-out of Mg acceptors and the choice of proper biasing conditions for deep traps spectra analysis.
Original language | English |
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Pages (from-to) | Q274-Q277 |
Journal | ECS Journal of Solid State Science and Technology |
Volume | 5 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2016 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2016 The Electrochemical Society.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials