Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticles

A. Y. Polyakov; N. B. Smirnov; E. B. Yakimov; Han Su Cho; Jong Hyeob Baek; A. V. Turutin; I. V. Shemerov; E. S. Kondratyev; In Hwan Lee

doi:10.1149/2.0051612jss

Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticles

A. Y. Polyakov, N. B. Smirnov, E. B. Yakimov, Han Su Cho, Jong Hyeob Baek, A. V. Turutin, I. V. Shemerov, E. S. Kondratyev, In Hwan Lee

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Deep traps spectra are compared forGaN/InGaN light emitting diodeswith andwithout a template embeddedwith SiO2 nanoparticles underlying the active multiple quantum well region. The structures with SiO2 nanoparticles show a higher internal quantum efficiency which correlates with a lower concentration of deep traps with level near Ec-0.6 eV as compared to reference structures. We discuss complications in deep traps analysis coming from the freeze-out of Mg acceptors and the choice of proper biasing conditions for deep traps spectra analysis.

Original language	English
Pages (from-to)	Q274-Q277
Journal	ECS Journal of Solid State Science and Technology
Volume	5
Issue number	10
DOIs	https://doi.org/10.1149/2.0051612jss
Publication status	Published - 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2016 The Electrochemical Society.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1149/2.0051612jss

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Polyakov, A. Y., Smirnov, N. B., Yakimov, E. B., Cho, H. S., Baek, J. H., Turutin, A. V., Shemerov, I. V., Kondratyev, E. S., & Lee, I. H. (2016). Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticles. ECS Journal of Solid State Science and Technology, 5(10), Q274-Q277. https://doi.org/10.1149/2.0051612jss

Polyakov, AY, Smirnov, NB, Yakimov, EB, Cho, HS, Baek, JH, Turutin, AV, Shemerov, IV, Kondratyev, ES & Lee, IH 2016, 'Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticles', ECS Journal of Solid State Science and Technology, vol. 5, no. 10, pp. Q274-Q277. https://doi.org/10.1149/2.0051612jss

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abstract = "Deep traps spectra are compared forGaN/InGaN light emitting diodeswith andwithout a template embeddedwith SiO2 nanoparticles underlying the active multiple quantum well region. The structures with SiO2 nanoparticles show a higher internal quantum efficiency which correlates with a lower concentration of deep traps with level near Ec-0.6 eV as compared to reference structures. We discuss complications in deep traps analysis coming from the freeze-out of Mg acceptors and the choice of proper biasing conditions for deep traps spectra analysis.",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Yakimov, {E. B.} and Cho, {Han Su} and Baek, {Jong Hyeob} and Turutin, {A. V.} and Shemerov, {I. V.} and Kondratyev, {E. S.} and Lee, {In Hwan}",

note = "Publisher Copyright: {\textcopyright} 2016 The Electrochemical Society.",

year = "2016",

doi = "10.1149/2.0051612jss",

language = "English",

volume = "5",

pages = "Q274--Q277",

journal = "ECS Journal of Solid State Science and Technology",

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T1 - Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticles

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Yakimov, E. B.

AU - Cho, Han Su

AU - Baek, Jong Hyeob

AU - Turutin, A. V.

AU - Shemerov, I. V.

AU - Kondratyev, E. S.

AU - Lee, In Hwan

PY - 2016

Y1 - 2016

N2 - Deep traps spectra are compared forGaN/InGaN light emitting diodeswith andwithout a template embeddedwith SiO2 nanoparticles underlying the active multiple quantum well region. The structures with SiO2 nanoparticles show a higher internal quantum efficiency which correlates with a lower concentration of deep traps with level near Ec-0.6 eV as compared to reference structures. We discuss complications in deep traps analysis coming from the freeze-out of Mg acceptors and the choice of proper biasing conditions for deep traps spectra analysis.

AB - Deep traps spectra are compared forGaN/InGaN light emitting diodeswith andwithout a template embeddedwith SiO2 nanoparticles underlying the active multiple quantum well region. The structures with SiO2 nanoparticles show a higher internal quantum efficiency which correlates with a lower concentration of deep traps with level near Ec-0.6 eV as compared to reference structures. We discuss complications in deep traps analysis coming from the freeze-out of Mg acceptors and the choice of proper biasing conditions for deep traps spectra analysis.

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DO - 10.1149/2.0051612jss

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SP - Q274-Q277

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 10

ER -

Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticles

Abstract

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ASJC Scopus subject areas

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