Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticles

A. Y. Polyakov; N. B. Smirnov; E. B. Yakimov; Han Su Cho; Jong Hyeob Baek; A. V. Turutin; I. V. Shemerov; E. S. Kondratyev; In Hwan Lee

doi:10.1149/2.0051612jss

Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticles

A. Y. Polyakov
, N. B. Smirnov
, E. B. Yakimov
, Han Su Cho
, Jong Hyeob Baek
, A. V. Turutin
, I. V. Shemerov
, E. S. Kondratyev
, In Hwan Lee

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Deep traps spectra are compared forGaN/InGaN light emitting diodeswith andwithout a template embeddedwith SiO2 nanoparticles underlying the active multiple quantum well region. The structures with SiO2 nanoparticles show a higher internal quantum efficiency which correlates with a lower concentration of deep traps with level near Ec-0.6 eV as compared to reference structures. We discuss complications in deep traps analysis coming from the freeze-out of Mg acceptors and the choice of proper biasing conditions for deep traps spectra analysis.

Original language	English
Pages (from-to)	Q274-Q277
Journal	ECS Journal of Solid State Science and Technology
Volume	5
Issue number	10
DOIs	https://doi.org/10.1149/2.0051612jss
Publication status	Published - 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2016 The Electrochemical Society.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1149/2.0051612jss

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Polyakov, A. Y., Smirnov, N. B., Yakimov, E. B., Cho, H. S., Baek, J. H., Turutin, A. V., Shemerov, I. V., Kondratyev, E. S., & Lee, I. H. (2016). Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticles. ECS Journal of Solid State Science and Technology, 5(10), Q274-Q277. https://doi.org/10.1149/2.0051612jss

Polyakov, AY, Smirnov, NB, Yakimov, EB, Cho, HS, Baek, JH, Turutin, AV, Shemerov, IV, Kondratyev, ES & Lee, IH 2016, 'Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticles', ECS Journal of Solid State Science and Technology, vol. 5, no. 10, pp. Q274-Q277. https://doi.org/10.1149/2.0051612jss

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title = "Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticles",

abstract = "Deep traps spectra are compared forGaN/InGaN light emitting diodeswith andwithout a template embeddedwith SiO2 nanoparticles underlying the active multiple quantum well region. The structures with SiO2 nanoparticles show a higher internal quantum efficiency which correlates with a lower concentration of deep traps with level near Ec-0.6 eV as compared to reference structures. We discuss complications in deep traps analysis coming from the freeze-out of Mg acceptors and the choice of proper biasing conditions for deep traps spectra analysis.",

author = "Polyakov, \{A. Y.\} and Smirnov, \{N. B.\} and Yakimov, \{E. B.\} and Cho, \{Han Su\} and Baek, \{Jong Hyeob\} and Turutin, \{A. V.\} and Shemerov, \{I. V.\} and Kondratyev, \{E. S.\} and Lee, \{In Hwan\}",

note = "Publisher Copyright: {\textcopyright} 2016 The Electrochemical Society.",

year = "2016",

doi = "10.1149/2.0051612jss",

language = "English",

volume = "5",

pages = "Q274--Q277",

journal = "ECS Journal of Solid State Science and Technology",

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T1 - Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticles

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Yakimov, E. B.

AU - Cho, Han Su

AU - Baek, Jong Hyeob

AU - Turutin, A. V.

AU - Shemerov, I. V.

AU - Kondratyev, E. S.

AU - Lee, In Hwan

PY - 2016

Y1 - 2016

N2 - Deep traps spectra are compared forGaN/InGaN light emitting diodeswith andwithout a template embeddedwith SiO2 nanoparticles underlying the active multiple quantum well region. The structures with SiO2 nanoparticles show a higher internal quantum efficiency which correlates with a lower concentration of deep traps with level near Ec-0.6 eV as compared to reference structures. We discuss complications in deep traps analysis coming from the freeze-out of Mg acceptors and the choice of proper biasing conditions for deep traps spectra analysis.

AB - Deep traps spectra are compared forGaN/InGaN light emitting diodeswith andwithout a template embeddedwith SiO2 nanoparticles underlying the active multiple quantum well region. The structures with SiO2 nanoparticles show a higher internal quantum efficiency which correlates with a lower concentration of deep traps with level near Ec-0.6 eV as compared to reference structures. We discuss complications in deep traps analysis coming from the freeze-out of Mg acceptors and the choice of proper biasing conditions for deep traps spectra analysis.

UR - https://www.scopus.com/pages/publications/84992202508

U2 - 10.1149/2.0051612jss

DO - 10.1149/2.0051612jss

M3 - Article

AN - SCOPUS:84992202508

SN - 2162-8769

VL - 5

SP - Q274-Q277

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 10

ER -

Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticles

Abstract

Bibliographical note

ASJC Scopus subject areas

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