Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy

In Hwan Lee; A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; A. S. Usikov; H. Helava; Yu N. Makarov; S. J. Pearton

doi:10.1063/1.4882715

Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy

In Hwan Lee, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. S. Usikov, H. Helava, Yu N. Makarov, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

Deep hole traps were studied in bulk free-standing GaN crystals and in thinner (10-20μm) GaN films prepared by hydride vapor phase epitaxy (HVPE) on sapphire. Six hole traps in different combinations were detected in these crystals, H1 (activation energy 0.92-0.94eV), H2 (0.55eV), H3 (0.65-0.7eV), H4 (0.85-0.9eV), H5 (1.1-1.2eV), and H6 (0.95-1.05eV). The dominant traps in all samples were the H5 and H6 traps that were attributed, respectively, to gallium vacancy complexes with oxygen (V_Ga-O) and substitutional carbon related centers. We associate the H5 hole traps with the red luminescence bands, the H4 hole traps with the green luminescence bands, and the H6 hole traps with the yellow luminescence bands often observed in HVPE GaN. These attributions are based on the low energy thresholds of the deep traps optical excitation spectra and the depth of the respective trap levels.

Original language	English
Article number	223702
Journal	Journal of Applied Physics
Volume	115
Issue number	22
DOIs	https://doi.org/10.1063/1.4882715
Publication status	Published - 2014 Jun 14
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy",

abstract = "Deep hole traps were studied in bulk free-standing GaN crystals and in thinner (10-20μm) GaN films prepared by hydride vapor phase epitaxy (HVPE) on sapphire. Six hole traps in different combinations were detected in these crystals, H1 (activation energy 0.92-0.94eV), H2 (0.55eV), H3 (0.65-0.7eV), H4 (0.85-0.9eV), H5 (1.1-1.2eV), and H6 (0.95-1.05eV). The dominant traps in all samples were the H5 and H6 traps that were attributed, respectively, to gallium vacancy complexes with oxygen (VGa-O) and substitutional carbon related centers. We associate the H5 hole traps with the red luminescence bands, the H4 hole traps with the green luminescence bands, and the H6 hole traps with the yellow luminescence bands often observed in HVPE GaN. These attributions are based on the low energy thresholds of the deep traps optical excitation spectra and the depth of the respective trap levels.",

author = "Lee, {In Hwan} and Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Usikov, {A. S.} and H. Helava and Makarov, {Yu N.} and Pearton, {S. J.}",

year = "2014",

month = jun,

day = "14",

doi = "10.1063/1.4882715",

language = "English",

volume = "115",

journal = "Journal of Applied Physics",

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T1 - Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy

AU - Lee, In Hwan

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Usikov, A. S.

AU - Helava, H.

AU - Makarov, Yu N.

AU - Pearton, S. J.

PY - 2014/6/14

Y1 - 2014/6/14

N2 - Deep hole traps were studied in bulk free-standing GaN crystals and in thinner (10-20μm) GaN films prepared by hydride vapor phase epitaxy (HVPE) on sapphire. Six hole traps in different combinations were detected in these crystals, H1 (activation energy 0.92-0.94eV), H2 (0.55eV), H3 (0.65-0.7eV), H4 (0.85-0.9eV), H5 (1.1-1.2eV), and H6 (0.95-1.05eV). The dominant traps in all samples were the H5 and H6 traps that were attributed, respectively, to gallium vacancy complexes with oxygen (VGa-O) and substitutional carbon related centers. We associate the H5 hole traps with the red luminescence bands, the H4 hole traps with the green luminescence bands, and the H6 hole traps with the yellow luminescence bands often observed in HVPE GaN. These attributions are based on the low energy thresholds of the deep traps optical excitation spectra and the depth of the respective trap levels.

AB - Deep hole traps were studied in bulk free-standing GaN crystals and in thinner (10-20μm) GaN films prepared by hydride vapor phase epitaxy (HVPE) on sapphire. Six hole traps in different combinations were detected in these crystals, H1 (activation energy 0.92-0.94eV), H2 (0.55eV), H3 (0.65-0.7eV), H4 (0.85-0.9eV), H5 (1.1-1.2eV), and H6 (0.95-1.05eV). The dominant traps in all samples were the H5 and H6 traps that were attributed, respectively, to gallium vacancy complexes with oxygen (VGa-O) and substitutional carbon related centers. We associate the H5 hole traps with the red luminescence bands, the H4 hole traps with the green luminescence bands, and the H6 hole traps with the yellow luminescence bands often observed in HVPE GaN. These attributions are based on the low energy thresholds of the deep traps optical excitation spectra and the depth of the respective trap levels.

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VL - 115

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JF - Journal of Applied Physics

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ER -

Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy

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