Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells

H. S. Lee, M. Yamaguchi, N. J. Ekins-Daukes, A. Khan, T. Takamoto, T. Agui, K. Kamimura, M. Kaneiwa, M. Imaizumi, T. Ohshima, H. Itoh

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Presented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al0.08 Ga0.92) 0.52 In0.48 P diodes and solar cells. The carrier removal rate estimated in p -AlInGaP with electron fluence is about 1 cm-1, which is lower than that in InP and GaAs. From high-temperature deep-level transient spectroscopy measurements, a deep-level defect center such as majority-carrier (hole) trap H2 (E ν +0.90±0.05 eV) was observed. The changes in carrier concentrations (Δp) and trap densities as a function of electron fluence were compared, and as a result the total introduction rate, 0.39 cm-1, of majority-carrier trap centers (H1 and H2) is different from the carrier removal rate, 1 cm-1, in p -AlInGaP. From the minority-carrier injection annealing (100 mA cm2), the annealing activation energy of H2 defect is ΔE=0.60 eV, which is likely to be associated with a vacancy-phosphorus Frenkel pair (Vp - Pi). The recovery of defect concentration and carrier concentration in the irradiated p -AlInGaP by injection relates that a deep-level defect H2 acts as a recombination center as well as compensator center.

Original languageEnglish
Article number093701
JournalJournal of Applied Physics
Issue number9
Publication statusPublished - 2005 Nov 1
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported in part by the Ministry of Education, Culture, Sports, Science and Technology as a Private University Academic Frontier Center Program in Japan.

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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