Deep-level studies in GaN layers grown by epitaxial lateral overgrowth

In Hwan Lee; A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; A. V. Markov; S. J. Pearton

doi:10.1016/j.tsf.2007.07.144

Deep-level studies in GaN layers grown by epitaxial lateral overgrowth

In Hwan Lee, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The electrical properties, deep-level spectra, microcathodoluminescence (MCL) spectra and diffusion lengths of minority charge carriers were measured in GaN films grown by the epitaxial lateral overgrowth (ELOG) technique. The results are compared to the properties of GaN layers grown in a standard fashion without masking of the initial template. MCL and electron beam induced current (EBIC) imaging of the laterally overgrown regions revealed the presence of dark spots with density of 1-5 × 10⁶ cm^- 2 that are associated with individual dislocations. The concentration of deep electron and hole traps was found to be much higher in the standard material than in the ELOG material. Diffusion lengths of minority carriers determined from EBIC signal profiling gave values of 0.8-1 μm along the bright regions and 0.4-0.5 μm in the dark regions of the ELOG samples. Similar measurements on metal organic chemical vapor deposition templates gave a diffusion length of 0.4-0.5 μm, close to the diffusion length in the dark stripes of the ELOG samples.

Original language	English
Pages (from-to)	2035-2040
Number of pages	6
Journal	Thin Solid Films
Volume	516
Issue number	8
DOIs	https://doi.org/10.1016/j.tsf.2007.07.144
Publication status	Published - 2008 Feb 29
Externally published	Yes

Bibliographical note

Funding Information:
The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (grant 04-02-16510).

Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

Keywords

Deep-level transient spectroscopy
Electrical properties and measurements
Gallium nitride
Metal organic chemical vapor deposition

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2007.07.144

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title = "Deep-level studies in GaN layers grown by epitaxial lateral overgrowth",

abstract = "The electrical properties, deep-level spectra, microcathodoluminescence (MCL) spectra and diffusion lengths of minority charge carriers were measured in GaN films grown by the epitaxial lateral overgrowth (ELOG) technique. The results are compared to the properties of GaN layers grown in a standard fashion without masking of the initial template. MCL and electron beam induced current (EBIC) imaging of the laterally overgrown regions revealed the presence of dark spots with density of 1-5 × 106 cm- 2 that are associated with individual dislocations. The concentration of deep electron and hole traps was found to be much higher in the standard material than in the ELOG material. Diffusion lengths of minority carriers determined from EBIC signal profiling gave values of 0.8-1 μm along the bright regions and 0.4-0.5 μm in the dark regions of the ELOG samples. Similar measurements on metal organic chemical vapor deposition templates gave a diffusion length of 0.4-0.5 μm, close to the diffusion length in the dark stripes of the ELOG samples.",

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author = "Lee, {In Hwan} and Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Markov, {A. V.} and Pearton, {S. J.}",

note = "Funding Information: The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (grant 04-02-16510). Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2008",

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doi = "10.1016/j.tsf.2007.07.144",

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AU - Lee, In Hwan

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Markov, A. V.

AU - Pearton, S. J.

N1 - Funding Information: The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (grant 04-02-16510). Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2008/2/29

Y1 - 2008/2/29

N2 - The electrical properties, deep-level spectra, microcathodoluminescence (MCL) spectra and diffusion lengths of minority charge carriers were measured in GaN films grown by the epitaxial lateral overgrowth (ELOG) technique. The results are compared to the properties of GaN layers grown in a standard fashion without masking of the initial template. MCL and electron beam induced current (EBIC) imaging of the laterally overgrown regions revealed the presence of dark spots with density of 1-5 × 106 cm- 2 that are associated with individual dislocations. The concentration of deep electron and hole traps was found to be much higher in the standard material than in the ELOG material. Diffusion lengths of minority carriers determined from EBIC signal profiling gave values of 0.8-1 μm along the bright regions and 0.4-0.5 μm in the dark regions of the ELOG samples. Similar measurements on metal organic chemical vapor deposition templates gave a diffusion length of 0.4-0.5 μm, close to the diffusion length in the dark stripes of the ELOG samples.

AB - The electrical properties, deep-level spectra, microcathodoluminescence (MCL) spectra and diffusion lengths of minority charge carriers were measured in GaN films grown by the epitaxial lateral overgrowth (ELOG) technique. The results are compared to the properties of GaN layers grown in a standard fashion without masking of the initial template. MCL and electron beam induced current (EBIC) imaging of the laterally overgrown regions revealed the presence of dark spots with density of 1-5 × 106 cm- 2 that are associated with individual dislocations. The concentration of deep electron and hole traps was found to be much higher in the standard material than in the ELOG material. Diffusion lengths of minority carriers determined from EBIC signal profiling gave values of 0.8-1 μm along the bright regions and 0.4-0.5 μm in the dark regions of the ELOG samples. Similar measurements on metal organic chemical vapor deposition templates gave a diffusion length of 0.4-0.5 μm, close to the diffusion length in the dark stripes of the ELOG samples.

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KW - Electrical properties and measurements

KW - Gallium nitride

KW - Metal organic chemical vapor deposition

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Deep-level studies in GaN layers grown by epitaxial lateral overgrowth

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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