Deep trap analysis in green light emitting diodes: Problems and solutions

A. Y. Polyakov; N. M. Shmidt; N. B. Smirnov; I. V. Shchemerov; E. I. Shabunina; N. A. Tal'nishnih; In Hwan Lee; L. A. Alexanyan; S. A. Tarelkin; S. J. Pearton

doi:10.1063/1.5093723

Deep trap analysis in green light emitting diodes: Problems and solutions

A. Y. Polyakov, N. M. Shmidt, N. B. Smirnov, I. V. Shchemerov, E. I. Shabunina, N. A. Tal'nishnih, In Hwan Lee, L. A. Alexanyan, S. A. Tarelkin, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Some green light emitting diodes (LEDs) based on GaN/InGaN multiquantum-well (MQW) structures exhibit strong frequency and temperature dependence of capacitance and prominent changes in capacitance-voltage profiles with temperature that make it difficult to obtain reliable deep level transient spectroscopy (DLTS) measurements. DLTS performed at low probing signal frequency and with constant capacitance between the measurements by controlling applied bias mitigates these issues. This allows measurement of deep electron and hole traps in specific quantum wells (QWs) in the MQW structure. The dominant electron and hole traps detected have levels near E c^- (0.45-0.5) eV and E v⁺ (0.6-0.63) eV. Their density increases significantly after aging for a long period (2120 h) at high driving current and elevated temperature. The reason for the observed anomalies in DLTS spectra of these green LEDs is the high density of states in the QWs with activation energies near 0.08, 0.12-0.14, and 0.3 eV, detected in admittance spectra, and, for the 0.08 eV and 0.3 eV, these states are likely related to defects.

Original language	English
Article number	215701
Journal	Journal of Applied Physics
Volume	125
Issue number	21
DOIs	https://doi.org/10.1063/1.5093723
Publication status	Published - 2019 Jun 7

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Publisher Copyright:
© 2019 Author(s).

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.5093723

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@article{eec8d5351eb9492896a9e5b2189a790c,

title = "Deep trap analysis in green light emitting diodes: Problems and solutions",

abstract = "Some green light emitting diodes (LEDs) based on GaN/InGaN multiquantum-well (MQW) structures exhibit strong frequency and temperature dependence of capacitance and prominent changes in capacitance-voltage profiles with temperature that make it difficult to obtain reliable deep level transient spectroscopy (DLTS) measurements. DLTS performed at low probing signal frequency and with constant capacitance between the measurements by controlling applied bias mitigates these issues. This allows measurement of deep electron and hole traps in specific quantum wells (QWs) in the MQW structure. The dominant electron and hole traps detected have levels near E c- (0.45-0.5) eV and E v+ (0.6-0.63) eV. Their density increases significantly after aging for a long period (2120 h) at high driving current and elevated temperature. The reason for the observed anomalies in DLTS spectra of these green LEDs is the high density of states in the QWs with activation energies near 0.08, 0.12-0.14, and 0.3 eV, detected in admittance spectra, and, for the 0.08 eV and 0.3 eV, these states are likely related to defects.",

author = "Polyakov, {A. Y.} and Shmidt, {N. M.} and Smirnov, {N. B.} and Shchemerov, {I. V.} and Shabunina, {E. I.} and Tal'nishnih, {N. A.} and Lee, {In Hwan} and Alexanyan, {L. A.} and Tarelkin, {S. A.} and Pearton, {S. J.}",

note = "Publisher Copyright: {\textcopyright} 2019 Author(s).",

year = "2019",

month = jun,

day = "7",

doi = "10.1063/1.5093723",

language = "English",

volume = "125",

journal = "Journal of Applied Physics",

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T1 - Deep trap analysis in green light emitting diodes

T2 - Problems and solutions

AU - Polyakov, A. Y.

AU - Shmidt, N. M.

AU - Smirnov, N. B.

AU - Shchemerov, I. V.

AU - Shabunina, E. I.

AU - Tal'nishnih, N. A.

AU - Lee, In Hwan

AU - Alexanyan, L. A.

AU - Tarelkin, S. A.

AU - Pearton, S. J.

PY - 2019/6/7

Y1 - 2019/6/7

N2 - Some green light emitting diodes (LEDs) based on GaN/InGaN multiquantum-well (MQW) structures exhibit strong frequency and temperature dependence of capacitance and prominent changes in capacitance-voltage profiles with temperature that make it difficult to obtain reliable deep level transient spectroscopy (DLTS) measurements. DLTS performed at low probing signal frequency and with constant capacitance between the measurements by controlling applied bias mitigates these issues. This allows measurement of deep electron and hole traps in specific quantum wells (QWs) in the MQW structure. The dominant electron and hole traps detected have levels near E c- (0.45-0.5) eV and E v+ (0.6-0.63) eV. Their density increases significantly after aging for a long period (2120 h) at high driving current and elevated temperature. The reason for the observed anomalies in DLTS spectra of these green LEDs is the high density of states in the QWs with activation energies near 0.08, 0.12-0.14, and 0.3 eV, detected in admittance spectra, and, for the 0.08 eV and 0.3 eV, these states are likely related to defects.

AB - Some green light emitting diodes (LEDs) based on GaN/InGaN multiquantum-well (MQW) structures exhibit strong frequency and temperature dependence of capacitance and prominent changes in capacitance-voltage profiles with temperature that make it difficult to obtain reliable deep level transient spectroscopy (DLTS) measurements. DLTS performed at low probing signal frequency and with constant capacitance between the measurements by controlling applied bias mitigates these issues. This allows measurement of deep electron and hole traps in specific quantum wells (QWs) in the MQW structure. The dominant electron and hole traps detected have levels near E c- (0.45-0.5) eV and E v+ (0.6-0.63) eV. Their density increases significantly after aging for a long period (2120 h) at high driving current and elevated temperature. The reason for the observed anomalies in DLTS spectra of these green LEDs is the high density of states in the QWs with activation energies near 0.08, 0.12-0.14, and 0.3 eV, detected in admittance spectra, and, for the 0.08 eV and 0.3 eV, these states are likely related to defects.

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Deep trap analysis in green light emitting diodes: Problems and solutions

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