Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures

A. Y. Polyakov, Lee Woon Jang, Dong Seob Jo, In Hwan Lee, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, Kwang Hyeon Baik, Sung Min Hwang

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Nonpolar (11-20) a-GaN/InGaN quantum well (QW) structures were grown by metalorganic chemical vapor deposition on r-plane (1-102) sapphire substrate using a two-stage growth procedure. Our studies demonstrate that, in contrast to polar QWs, these structures show the presence of deep electron traps with activation energy of 0.41 eV in admittance spectra and 1 eV electron traps in capacitance transient spectra. These traps are suspected to be nonradiative recombination centers, decreasing the nonpolar QW photoluminescence (PL) efficiency in our structures compared to polar structures. The PL efficiency of nonpolar QWs is shown to be greatly enhanced by coupling to localized surface plasmons formed by Ag nanoparticles.

Original languageEnglish
Article number033103
JournalJournal of Applied Physics
Issue number3
Publication statusPublished - 2012 Feb 1
Externally publishedYes

Bibliographical note

Funding Information:
The work at IRM was supported in part by the Russian Foundation for Basic Research RFBR grants #10-02-00566-a and 11-02-00718-a. The work at Chonbuk National University was supported by the National Research Foundation of Korea (NRF) funded by the Korea government (MEST) (2010-0019626, 2010-0026614). A.Y.P. gratefully acknowledges support from the Brain Pool Program of Korean Government during his stay at Chonbuk National University.

ASJC Scopus subject areas

  • General Physics and Astronomy


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