Deep traps in GaN-based structures as affecting the performance of GaN devices

Alexander Y. Polyakov; In Hwan Lee

doi:10.1016/j.mser.2015.05.001

Deep traps in GaN-based structures as affecting the performance of GaN devices

Alexander Y. Polyakov, In Hwan Lee

Research output: Contribution to journal › Review article › peer-review

198 Citations (Scopus)

Abstract

New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent to compensation and recombination in these materials are discussed. New results on experimental studies on defect states of Si, O, Mg, C, Fe in GaN, InGaN, and AlGaN are surveyed. Deep electron and hole traps data reported for GaN and AlGaN are critically assessed. The role of deep defects in trapping in AlGaN/GaN, InAlN/GaN structures and transistors and in degradation of transistor parameters during electrical stress tests and after irradiation is discussed. The recent data on deep traps influence on luminescent efficiency and degradation of characteristics of III-Nitride light emitting devices and laser diodes are reviewed.

Original language	English
Pages (from-to)	1-56
Number of pages	56
Journal	Materials Science and Engineering R: Reports
Volume	94
DOIs	https://doi.org/10.1016/j.mser.2015.05.001
Publication status	Published - 2015 May 28
Externally published	Yes

Bibliographical note

Funding Information:
The authors would like to gratefully acknowledge the contribution to this paper of long standing collaboration with Dr. N.B. Smirnov at MISiS (Moscow), Prof. E. Yakimov (IPTM, Chernogolovka, Russia), Prof. S.J. Pearton, Prof. Fan Ren (both University of Florida, Gainesville USA), of Prof. H. Amano at Nagoya University (Nagoya, Japan), Prof. J. Han at Yale University (New Haven, USA), and Dr. A. Dabiran at SVT Technologies (Minneapolis, USA). The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increased Competitiveness Program of NUST “MISiS” (No. K2-2014-055 ). The work at Chonbuk National University was supported by National Research Foundation of Korea (NRF) funded by Ministry of Science, ICT & Future Planning ( 2013R1A2A2A07067688 , 2010-0019626 ). AYP would like to acknowledge support from the Brain Pool program of the Korean Government during his stay at Chonbuk National University.

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

Keywords

Deep traps
Device degradation
Dislocations
HEMT
III-Nitrides
LED

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mser.2015.05.001

Cite this

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title = "Deep traps in GaN-based structures as affecting the performance of GaN devices",

abstract = "New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent to compensation and recombination in these materials are discussed. New results on experimental studies on defect states of Si, O, Mg, C, Fe in GaN, InGaN, and AlGaN are surveyed. Deep electron and hole traps data reported for GaN and AlGaN are critically assessed. The role of deep defects in trapping in AlGaN/GaN, InAlN/GaN structures and transistors and in degradation of transistor parameters during electrical stress tests and after irradiation is discussed. The recent data on deep traps influence on luminescent efficiency and degradation of characteristics of III-Nitride light emitting devices and laser diodes are reviewed.",

keywords = "Deep traps, Device degradation, Dislocations, HEMT, III-Nitrides, LED",

author = "Polyakov, {Alexander Y.} and Lee, {In Hwan}",

note = "Funding Information: The authors would like to gratefully acknowledge the contribution to this paper of long standing collaboration with Dr. N.B. Smirnov at MISiS (Moscow), Prof. E. Yakimov (IPTM, Chernogolovka, Russia), Prof. S.J. Pearton, Prof. Fan Ren (both University of Florida, Gainesville USA), of Prof. H. Amano at Nagoya University (Nagoya, Japan), Prof. J. Han at Yale University (New Haven, USA), and Dr. A. Dabiran at SVT Technologies (Minneapolis, USA). The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increased Competitiveness Program of NUST “MISiS” (No. K2-2014-055 ). The work at Chonbuk National University was supported by National Research Foundation of Korea (NRF) funded by Ministry of Science, ICT & Future Planning ( 2013R1A2A2A07067688 , 2010-0019626 ). AYP would like to acknowledge support from the Brain Pool program of the Korean Government during his stay at Chonbuk National University. Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

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PY - 2015/5/28

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N2 - New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent to compensation and recombination in these materials are discussed. New results on experimental studies on defect states of Si, O, Mg, C, Fe in GaN, InGaN, and AlGaN are surveyed. Deep electron and hole traps data reported for GaN and AlGaN are critically assessed. The role of deep defects in trapping in AlGaN/GaN, InAlN/GaN structures and transistors and in degradation of transistor parameters during electrical stress tests and after irradiation is discussed. The recent data on deep traps influence on luminescent efficiency and degradation of characteristics of III-Nitride light emitting devices and laser diodes are reviewed.

AB - New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent to compensation and recombination in these materials are discussed. New results on experimental studies on defect states of Si, O, Mg, C, Fe in GaN, InGaN, and AlGaN are surveyed. Deep electron and hole traps data reported for GaN and AlGaN are critically assessed. The role of deep defects in trapping in AlGaN/GaN, InAlN/GaN structures and transistors and in degradation of transistor parameters during electrical stress tests and after irradiation is discussed. The recent data on deep traps influence on luminescent efficiency and degradation of characteristics of III-Nitride light emitting devices and laser diodes are reviewed.

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Deep traps in GaN-based structures as affecting the performance of GaN devices

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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