Abstract
In this study, a device scheme for improving the internal quantum efficiency (IQE) of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) is proposed and numerically investigated using SimuLED software. By step-increasing the thickness of the quantum wells and step-decreasing the thickness of quantum barriers in a multiple quantum well (MQW) structure, the IQE of a DUV-LED at 20 mA is increased by a factor of approximately 1.3 relative to the reference LED. These improvements are attributed to increased radiative recombination rates resulting from enhanced hole injection and uniform carrier distribution within the MQWs.
| Original language | English |
|---|---|
| Pages (from-to) | 656-660 |
| Number of pages | 5 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 211 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2014 Mar |
Keywords
- device simulations
- light-emitting diodes
- potential barriers
- quantum efficiency
- quantum wells
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
- Electrical and Electronic Engineering