Deep-ultraviolet photodetector based on exfoliated n-type β-Ga2O3 nanobelt/p-Si substrate heterojunction

Gahyun Shin, Hong Yeol Kim, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)


Low-dimensional semiconductor p-n junctions as components for optoelectronic devices are considered to be more promising than thin film equivalents. We fabricated heterojunction p-n solar blind photodiodes with the configuration of n-type β-Ga2O3 nanobelts contacted onto p-Si substrates. The junction between β-Ga2O3 and Si was formed by van der Waals interactions. The fabricated heterojunction p-n diodes exhibited typical rectifying current–voltage characteristics, with a rectification ratio as high as 1.56×104 at ±20 V and an ideality factor of approximately eight. Photoresponsive measurements showed that the heterojunction p-n diodes had a high sensitivity and selectivity for light at a wavelength of 254 nm, with fast response and decay characteristics. For the fast-response components, the response time constant was 4.06 s and the decay time constant was 0.16 s. The exfoliated β-Ga2O3 nanobelt/Si p-n heterojunction presented here constitutes a functional unit for low-dimensional ultra-wide bandgap electronic and optoelectronic devices.

Original languageEnglish
Pages (from-to)574-578
Number of pages5
JournalKorean Journal of Chemical Engineering
Issue number2
Publication statusPublished - 2018 Feb 1


  • Nanobelt
  • Solar-blind Photodiode
  • p-n Heterojunction
  • van der Waals Interaction
  • β-GaO

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)


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