Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications

Kookjin Lee, Hyunjin Ji, Yanghee Kim, Ben Kaczer, Hyebin Lee, Jae Pyoung Ahn, Junhee Choi, Alexander Grill, Luca Panarella, Quentin Smets, Devin Verreck, Simon Van Beek, Adrian Chasin, Dimitri Linten, Junhong Na, Jae Woo Lee, Ingrid De Wolf, Gyu Tae Kim

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


In this study, the radiation effects of electron beam (e-beam) on field-effect transistors (FETs) using transition-metal dichalcogenides (TMD) as a channel are carefully investigated. Electron-hole pairs (EHPs) in SiO2 generated by e-beam irradiation induce additional traps, which change the surface potential of the TMD channel, resulting in strong negative shifts of transfer characteristics. These negative shifts, which remind one of n-doping effects, are highly affected not only by the condition of e-beam irradiation, but also by the gate bias condition during irradiating. As a result of the e-beam irradiation effect, band bending and contact resistance are affected, and the degree of formation of oxide traps and interface traps varies depending on the gate bias conditions. In the case of VG > 0 V application during e-beam irradiation, the negative shifts in the transfer characteristics are fully recovered after ambient exposure. However, the interface traps increase significantly, resulting in variations of low-frequency (LF) noise and time-dependent current fluctuations.

Original languageEnglish
Article number2102488
JournalAdvanced Materials Interfaces
Issue number9
Publication statusPublished - 2022 Mar 22

Bibliographical note

Publisher Copyright:
© 2022 Wiley-VCH GmbH


  • 2D materials
  • defects
  • electron beam
  • electron-hole pairs
  • field-effect transistor
  • low-frequency noise

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering


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