Abstract
To find the optimal growth and annealing conditions for high-power 650 nm band AlGaInP laser diodes, we carried out defect engineering, in which the distribution and density of deep level defects of the laser structure was analyzed. For this purpose, deep level transient spectroscopy (DLTS) measurements were carried out for each layer of the 650 nm band AlGaInP laser. By layer optimization at growth and annealing conditions, the laser diode was able operate stably and kink-free at high power over 220 mW at 70 °C. The characteristic temperatures (T0) were 212 K for 25-60 °C and 106 K over 60 °C.
Original language | English |
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Pages (from-to) | 610-613 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 376-377 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2006 Apr 1 |
Event | Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: 2005 Jul 24 → 2005 Jul 29 |
Bibliographical note
Funding Information:This work was partly supported by KOSEF through q–P si at Hanyang University, Korea.
Keywords
- AlGaInP
- DLTS
- Defects
- High-power laser
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering