Defect engineering for high-power 780 nm AlGaAs laser diodes

D. S. Kim; W. C. Choi; G. W. Moon; K. Y. Jang; T. G. Kim; Y. M. Sung

doi:10.1007/s10853-006-0961-3

Defect engineering for high-power 780 nm AlGaAs laser diodes

D. S. Kim, W. C. Choi, G. W. Moon, K. Y. Jang, T. G. Kim, Y. M. Sung

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Defect engineering is carried out to determine optimum growth conditions for highly reliable high-power 780 nm AlGaAs laser diodes (LDs) using deep level transient spectroscopy (DLTS). The DLTS results reveal that the defect density of the Al_0.48Ga_0.52As cladding layer depended heavily on growth temperature and AsH₃ flow but that of the Al _0.1Ga_0.9As active layer depended mostly on the growth rates of the active layer. As a result of layer optimization at growth condition by DLTS, a record high output power of 250 mW was obtained at an operating current as low as 129.6 mA under room temperature continuous wave (CW) operation.

Original language	English
Pages (from-to)	7319-7323
Number of pages	5
Journal	Journal of Materials Science
Volume	41
Issue number	22
DOIs	https://doi.org/10.1007/s10853-006-0961-3
Publication status	Published - 2006 Nov

Bibliographical note

Funding Information:
Acknowledgement This work was supported by KOSEF through q-Psi at Hanyang Univ.

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1007/s10853-006-0961-3

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title = "Defect engineering for high-power 780 nm AlGaAs laser diodes",

abstract = "Defect engineering is carried out to determine optimum growth conditions for highly reliable high-power 780 nm AlGaAs laser diodes (LDs) using deep level transient spectroscopy (DLTS). The DLTS results reveal that the defect density of the Al0.48Ga0.52As cladding layer depended heavily on growth temperature and AsH3 flow but that of the Al 0.1Ga0.9As active layer depended mostly on the growth rates of the active layer. As a result of layer optimization at growth condition by DLTS, a record high output power of 250 mW was obtained at an operating current as low as 129.6 mA under room temperature continuous wave (CW) operation.",

author = "Kim, {D. S.} and Choi, {W. C.} and Moon, {G. W.} and Jang, {K. Y.} and Kim, {T. G.} and Sung, {Y. M.}",

note = "Funding Information: Acknowledgement This work was supported by KOSEF through q-Psi at Hanyang Univ.",

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doi = "10.1007/s10853-006-0961-3",

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T1 - Defect engineering for high-power 780 nm AlGaAs laser diodes

AU - Kim, D. S.

AU - Choi, W. C.

AU - Moon, G. W.

AU - Jang, K. Y.

AU - Kim, T. G.

AU - Sung, Y. M.

N1 - Funding Information: Acknowledgement This work was supported by KOSEF through q-Psi at Hanyang Univ.

PY - 2006/11

Y1 - 2006/11

N2 - Defect engineering is carried out to determine optimum growth conditions for highly reliable high-power 780 nm AlGaAs laser diodes (LDs) using deep level transient spectroscopy (DLTS). The DLTS results reveal that the defect density of the Al0.48Ga0.52As cladding layer depended heavily on growth temperature and AsH3 flow but that of the Al 0.1Ga0.9As active layer depended mostly on the growth rates of the active layer. As a result of layer optimization at growth condition by DLTS, a record high output power of 250 mW was obtained at an operating current as low as 129.6 mA under room temperature continuous wave (CW) operation.

AB - Defect engineering is carried out to determine optimum growth conditions for highly reliable high-power 780 nm AlGaAs laser diodes (LDs) using deep level transient spectroscopy (DLTS). The DLTS results reveal that the defect density of the Al0.48Ga0.52As cladding layer depended heavily on growth temperature and AsH3 flow but that of the Al 0.1Ga0.9As active layer depended mostly on the growth rates of the active layer. As a result of layer optimization at growth condition by DLTS, a record high output power of 250 mW was obtained at an operating current as low as 129.6 mA under room temperature continuous wave (CW) operation.

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Defect engineering for high-power 780 nm AlGaAs laser diodes

Abstract

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