Defect levels and thermomigration of Te precipitates in CdZnTe:Pb

K. H. Kim; R. Gul; V. Carcelén; A. E. Bolotinkov; G. S. Carmarda; G. Yang; A. Hossain; Y. Cui; R. B. James; J. Hong; S. U. Kim

doi:10.1016/j.jcrysgro.2009.11.069

Defect levels and thermomigration of Te precipitates in CdZnTe:Pb

K. H. Kim, R. Gul, V. Carcelén, A. E. Bolotinkov, G. S. Carmarda, G. Yang, A. Hossain, Y. Cui, R. B. James, J. Hong, S. U. Kim

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Semi-insulating Cd_0.9Zn_0.1Te:Pb crystals were grown by the vertical Bridgman method. Measurements of the current deep level transient spectroscopy (I-DLTS) revealed three trap levels in this material. Unlike other compensating dopants, CdZnTe:Pb samples do not show any Cd-vacancies defects and A-center levels. We subjected them to temperature-gradient annealing in Cd overpressure at 490-717 °C, and recorded an exponential relationship between the annihilation time of Te precipitates and the annealing temperature. The energy resolution of an annealed CdZnTe:Pb detector, tested using a ¹³⁷Cs radioactive source, gave an energy resolution of 2.5%.

Original language	English
Pages (from-to)	781-784
Number of pages	4
Journal	Journal of Crystal Growth
Volume	312
Issue number	6
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.11.069
Publication status	Published - 2010 Mar 1
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the U.S. Department of Energy, Office of Nonproliferation Research and Development, NA-22. The manuscript has been authored by Brookhaven Science Associates, LLC under Contract no. DE-AC02-98CH1-886 with the U.S. Department of Energy .

Keywords

A1. Doping
A1. Point defects
A2. Bridgman technique
B1. Cadmium compounds
B2. Semiconducting II-VI materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2009.11.069

Cite this

@article{083566dd54be4199ba19eda94c9fd83b,

title = "Defect levels and thermomigration of Te precipitates in CdZnTe:Pb",

abstract = "Semi-insulating Cd0.9Zn0.1Te:Pb crystals were grown by the vertical Bridgman method. Measurements of the current deep level transient spectroscopy (I-DLTS) revealed three trap levels in this material. Unlike other compensating dopants, CdZnTe:Pb samples do not show any Cd-vacancies defects and A-center levels. We subjected them to temperature-gradient annealing in Cd overpressure at 490-717 °C, and recorded an exponential relationship between the annihilation time of Te precipitates and the annealing temperature. The energy resolution of an annealed CdZnTe:Pb detector, tested using a 137Cs radioactive source, gave an energy resolution of 2.5%.",

keywords = "A1. Doping, A1. Point defects, A2. Bridgman technique, B1. Cadmium compounds, B2. Semiconducting II-VI materials",

author = "Kim, {K. H.} and R. Gul and V. Carcel{\'e}n and Bolotinkov, {A. E.} and Carmarda, {G. S.} and G. Yang and A. Hossain and Y. Cui and James, {R. B.} and J. Hong and Kim, {S. U.}",

note = "Funding Information: This work was supported by the U.S. Department of Energy, Office of Nonproliferation Research and Development, NA-22. The manuscript has been authored by Brookhaven Science Associates, LLC under Contract no. DE-AC02-98CH1-886 with the U.S. Department of Energy . ",

year = "2010",

month = mar,

day = "1",

doi = "10.1016/j.jcrysgro.2009.11.069",

language = "English",

volume = "312",

pages = "781--784",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "6",

}

TY - JOUR

T1 - Defect levels and thermomigration of Te precipitates in CdZnTe:Pb

AU - Kim, K. H.

AU - Gul, R.

AU - Carcelén, V.

AU - Bolotinkov, A. E.

AU - Carmarda, G. S.

AU - Yang, G.

AU - Hossain, A.

AU - Cui, Y.

AU - James, R. B.

AU - Hong, J.

AU - Kim, S. U.

N1 - Funding Information: This work was supported by the U.S. Department of Energy, Office of Nonproliferation Research and Development, NA-22. The manuscript has been authored by Brookhaven Science Associates, LLC under Contract no. DE-AC02-98CH1-886 with the U.S. Department of Energy .

PY - 2010/3/1

Y1 - 2010/3/1

N2 - Semi-insulating Cd0.9Zn0.1Te:Pb crystals were grown by the vertical Bridgman method. Measurements of the current deep level transient spectroscopy (I-DLTS) revealed three trap levels in this material. Unlike other compensating dopants, CdZnTe:Pb samples do not show any Cd-vacancies defects and A-center levels. We subjected them to temperature-gradient annealing in Cd overpressure at 490-717 °C, and recorded an exponential relationship between the annihilation time of Te precipitates and the annealing temperature. The energy resolution of an annealed CdZnTe:Pb detector, tested using a 137Cs radioactive source, gave an energy resolution of 2.5%.

AB - Semi-insulating Cd0.9Zn0.1Te:Pb crystals were grown by the vertical Bridgman method. Measurements of the current deep level transient spectroscopy (I-DLTS) revealed three trap levels in this material. Unlike other compensating dopants, CdZnTe:Pb samples do not show any Cd-vacancies defects and A-center levels. We subjected them to temperature-gradient annealing in Cd overpressure at 490-717 °C, and recorded an exponential relationship between the annihilation time of Te precipitates and the annealing temperature. The energy resolution of an annealed CdZnTe:Pb detector, tested using a 137Cs radioactive source, gave an energy resolution of 2.5%.

KW - A1. Doping

KW - A1. Point defects

KW - A2. Bridgman technique

KW - B1. Cadmium compounds

KW - B2. Semiconducting II-VI materials

UR - http://www.scopus.com/inward/record.url?scp=76449094030&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2009.11.069

DO - 10.1016/j.jcrysgro.2009.11.069

M3 - Article

AN - SCOPUS:76449094030

SN - 0022-0248

VL - 312

SP - 781

EP - 784

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 6

ER -

Defect levels and thermomigration of Te precipitates in CdZnTe:Pb

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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