Defect levels of semi-insulating CdMnTe:In crystals

Keyphrases

• Semi-insulating 100%
• Defect Levels 100%
• CdMnTe 100%
• Photoluminescence 40%
• Dislocation 40%
• Crystal Growth 40%
• Cadmium Telluride 40%
• Electronic Defects 40%
• Induced Defects 40%
• I-DLTS 40%
• Indium Doped 40%
• Activation Energy 20%
• Scanning Electron Microscopy 20%
• Undoped 20%
• Typical Characteristics 20%
• Electronic Structure 20%
• Deep Level Transient Spectroscopy 20%
• Diffraction 20%
• Applied Bias Voltage 20%
• Defected Ground Structure 20%
• Doping Level 20%
• Synchrotron 20%
• New Defects 20%
• Indium Doping 20%
• Extended Defects 20%
• Shallow Traps 20%
• Vertical Bridgman Method 20%
• Defect Trapping 20%
• White Beam 20%
• Trap Model 20%
• Filling Time 20%
• Cd Vacancy 20%
• A-centre 20%
• DLS Measurements 20%
• Te Antisite 20%
• Trap Filling 20%

Material Science

• Indium 100%
• Deep-Level Transient Spectroscopy 100%
• Photoluminescence 66%
• Activation Energy 33%
• Scanning Electron Microscopy 33%
• Crystal Growth From Melt 33%
• Diffraction Topography 33%
• Energy Levels 33%
• Crystal Defect 33%

Physics

• Indium 100%
• Photoluminescence 66%
• Synchrotron 33%
• Scanning Electron Microscopy 33%
• Activation Energy 33%
• Bridgman Method 33%
• Diffraction Topography 33%
• Energy Levels 33%
• Transients 33%
• Crystal Defect 33%