Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing

Hyun Yong Yu; Jin Hong Park; Ali K. Okyay; Krishna C. Saraswat

doi:10.1149/1.2986841

Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing

Hyun Yong Yu, Jin Hong Park, Ali K. Okyay, Krishna C. Saraswat

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

We demonstrate a promising approach for the monolithic integration of Ge-based nanoelectronics and nanophotonics with S-ilicon: the selective deposition of Ge on Si by Multiple Hydrogen Annealing for Heteroepitaxy (MHAH). Very high quality Ge layers can be selectively integrated on Si CMOS platform with this technique. We confirm the reduction of dislocation density in Ge layers using AFM surface morphology study. In addition, in situ doping of Ge layers is achieved and MOS capacitor structures are studied.

Original language	English
Title of host publication	ECS Transactions - SiGe, Ge, and Related Compounds 3
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	823-828
Number of pages	6
Edition	10
ISBN (Print)	9781566776561
DOIs	https://doi.org/10.1149/1.2986841
Publication status	Published - 2009
Externally published	Yes
Event	3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States Duration: 2008 Oct 12 → 2008 Oct 17

Publication series

Name	ECS Transactions
Number	10
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	08/10/12 → 08/10/17

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.2986841

Cite this

Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing. / Yu, Hyun Yong; Park, Jin Hong; Okyay, Ali K. et al.
ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. 10. ed. Electrochemical Society Inc., 2009. p. 823-828 (ECS Transactions; Vol. 16, No. 10).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yu, HY, Park, JH, Okyay, AK & Saraswat, KC 2009, Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing. in ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. 10 edn, ECS Transactions, no. 10, vol. 16, Electrochemical Society Inc., pp. 823-828, 3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting, Honolulu, HI, United States, 08/10/12. https://doi.org/10.1149/1.2986841

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AU - Okyay, Ali K.

AU - Saraswat, Krishna C.

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AB - We demonstrate a promising approach for the monolithic integration of Ge-based nanoelectronics and nanophotonics with S-ilicon: the selective deposition of Ge on Si by Multiple Hydrogen Annealing for Heteroepitaxy (MHAH). Very high quality Ge layers can be selectively integrated on Si CMOS platform with this technique. We confirm the reduction of dislocation density in Ge layers using AFM surface morphology study. In addition, in situ doping of Ge layers is achieved and MOS capacitor structures are studied.

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M3 - Conference contribution

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BT - ECS Transactions - SiGe, Ge, and Related Compounds 3

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Y2 - 12 October 2008 through 17 October 2008

ER -

Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing

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