Defects in electron and neutron irradiated n-GaN: Disordered regions versus point defects

Alexander Y. Polyakov, Nikolai B. Smirnov, Anatoliy V. Govorkov, Alexander V. Markov, Cheul Ro Lee, In Hwan Lee, Nikolai G. Kolin, Denis I. Merkurisov, Vladimir M. Boiko, James S. Wright, Stephen J. Pearton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


Effects of 10 MeV electron and fast reactor neutron irradiations on carrier removal rate and deep traps spectra were compared for undoped n-GaN samples. It is shown that for electron irradiation the carrier removal rate is well accounted for by the difference in introduction rates of nitrogen-vacancy- related donors with activation energy 0.2 eV and of nitrogen-interstitial- related acceptors at Ec-1.2 eV. In the case of neutron irradiation the introduction rate of all deep traps was much lower than the carrier removal rate indicating that the main contribution to electron removal was due to disordered regions. These regions give rise to a marked persistent photocapacitance signal and a hole-trap-like feature in deep traps spectra. The Fermi level position in the core of disordered regions is located near E c-(0.85-1) eV.

Original languageEnglish
Title of host publicationAdvances in III-V Nitride Semiconductor Materials and Devices
PublisherMaterials Research Society
Number of pages3
ISBN (Print)9781604234114
Publication statusPublished - 2006
Externally publishedYes
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 2006 Nov 272006 Dec 1

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2006 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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