Defects limiting performance of devices fabricated on GaN/metal heterostructure

Serguei I. Maximenko; Jaime A. Freitas; Jeffrey A. Mittereder; Larry B. Rowland; Jihyun Kim

doi:10.1063/1.2936995

Defects limiting performance of devices fabricated on GaN/metal heterostructure

Serguei I. Maximenko, Jaime A. Freitas, Jeffrey A. Mittereder, Larry B. Rowland, Jihyun Kim

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Ni Schottky barrier contacts were processed to characterize quality and suitability of GaN films grown on (111) face of titanium carbide metallic substrates for vertical device application. We found that defects such as voids (pores) in the GaN film strongly influence the optical and electrical properties of the epitaxial layers. Micro-Raman studies showed that these voids have a high concentration of free carriers. Schottky barrier contacts placed on the regions with high defect density are characterized by high leakage current. Barrier height of Schottky contacts containing smaller number of defects were typically around 0.72 eV.

Original language	English
Article number	212104
Journal	Applied Physics Letters
Volume	92
Issue number	21
DOIs	https://doi.org/10.1063/1.2936995
Publication status	Published - 2008

Bibliographical note

Funding Information:
J.K. was partially supported by ONR-Global (N00014-07-1-4035). S.I.M. thanks the NRC program at NRL for support. We gratefully acknowledge Dr. Matt Doty for assistance with contact deposition.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Defects limiting performance of devices fabricated on GaN/metal heterostructure",

abstract = "Ni Schottky barrier contacts were processed to characterize quality and suitability of GaN films grown on (111) face of titanium carbide metallic substrates for vertical device application. We found that defects such as voids (pores) in the GaN film strongly influence the optical and electrical properties of the epitaxial layers. Micro-Raman studies showed that these voids have a high concentration of free carriers. Schottky barrier contacts placed on the regions with high defect density are characterized by high leakage current. Barrier height of Schottky contacts containing smaller number of defects were typically around 0.72 eV.",

author = "Maximenko, {Serguei I.} and Freitas, {Jaime A.} and Mittereder, {Jeffrey A.} and Rowland, {Larry B.} and Jihyun Kim",

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AU - Maximenko, Serguei I.

AU - Freitas, Jaime A.

AU - Mittereder, Jeffrey A.

AU - Rowland, Larry B.

AU - Kim, Jihyun

N1 - Funding Information: J.K. was partially supported by ONR-Global (N00014-07-1-4035). S.I.M. thanks the NRC program at NRL for support. We gratefully acknowledge Dr. Matt Doty for assistance with contact deposition.

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Y1 - 2008

N2 - Ni Schottky barrier contacts were processed to characterize quality and suitability of GaN films grown on (111) face of titanium carbide metallic substrates for vertical device application. We found that defects such as voids (pores) in the GaN film strongly influence the optical and electrical properties of the epitaxial layers. Micro-Raman studies showed that these voids have a high concentration of free carriers. Schottky barrier contacts placed on the regions with high defect density are characterized by high leakage current. Barrier height of Schottky contacts containing smaller number of defects were typically around 0.72 eV.

AB - Ni Schottky barrier contacts were processed to characterize quality and suitability of GaN films grown on (111) face of titanium carbide metallic substrates for vertical device application. We found that defects such as voids (pores) in the GaN film strongly influence the optical and electrical properties of the epitaxial layers. Micro-Raman studies showed that these voids have a high concentration of free carriers. Schottky barrier contacts placed on the regions with high defect density are characterized by high leakage current. Barrier height of Schottky contacts containing smaller number of defects were typically around 0.72 eV.

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Defects limiting performance of devices fabricated on GaN/metal heterostructure

Abstract

Bibliographical note

ASJC Scopus subject areas

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