Defects limiting performance of devices fabricated on GaN/metal heterostructure

Keyphrases

• GaN Films 100%
• Schottky Barrier 100%
• Limiting Performance 100%
• Metallic Heterostructures 100%
• Leakage Current 50%
• Electrical Properties 50%
• Optical Properties 50%
• Device Application 50%
• High Concentration 50%
• Barrier Height 50%
• Schottky Contact 50%
• Metallic Substrate 50%
• Epitaxial Layers 50%
• Defect Density 50%
• Defect numbers 50%
• Free Carriers 50%
• Micro-Raman Study 50%
• Vertical Devices 50%
• Void Pores 50%
• Titanium Carbide 50%

Material Science

• Heterojunction 100%
• Schottky Barrier 100%
• Film 66%
• Optical Property 33%
• Defect Density 33%
• Titanium Carbide 33%
• Epitaxial Film 33%

Engineering

• Heterojunctions 100%
• Schottky Barrier 100%
• Barrier Height 33%
• Defect Density 33%
• Epitaxial Film 33%