Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy

In Hwan Lee, A. Y. Polyakov, E. B. Yakimov, N. B. Smirnov, I. V. Shchemerov, S. A. Tarelkin, S. I. Didenko, K. I. Tapero, R. A. Zinovyev, S. J. Pearton

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31 Citations (Scopus)


The effects of room temperature 6 MeV electron irradiation on the donor concentration, deep trap spectra, and diffusion lengths of nonequilibrium charge carriers were studied for undoped n-GaN grown by hydride vapor phase epitaxy. Changes in these parameters begin at a threshold electron fluence of 5 × 1015 cm−2. The diffusion lengths after this fluence decrease by a factor of 3, accompanied by a drastic increase in the density of deep electron traps with the level near Ec - 1 eV. There is a strong correlation between the changes in the density of these traps and the diffusion length of irradiated n-GaN, indicating that these centers control the lifetime in radiation damaged n-GaN. This is in sharp contrast to the starting material, where the lifetimes are controlled by other deep electron traps at Ec - 0.56 eV. The concentration of the latter is not strongly affected by high energy electron irradiation.

Original languageEnglish
Article number112102
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 2017 Mar 13
Externally publishedYes

Bibliographical note

Funding Information:
The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of the Increase Competitiveness Program of NUST “MISiS” (К2-2014-055). The work at Chonbuk National University was supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning (2015042417). The work at UF was supported by DTRA 11-1-0020.

Publisher Copyright:
© 2017 Author(s).

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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