Degradation by sidewall recombination centers in GaN blue micro-LEDs at diameters<30 µm

In Hwan Lee; Tae Hwan Kim; A. Y. Polyakov; A. V. Chernykh; M. L. Skorikov; E. B. Yakimov; L. A. Alexanyan; I. V. Shchemerov; A. A. Vasilev; S. J. Pearton

doi:10.1016/j.jallcom.2022.166072

Degradation by sidewall recombination centers in GaN blue micro-LEDs at diameters<30 µm

In Hwan Lee, Tae Hwan Kim, A. Y. Polyakov, A. V. Chernykh, M. L. Skorikov, E. B. Yakimov, L. A. Alexanyan, I. V. Shchemerov, A. A. Vasilev, S. J. Pearton

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

A matrix of blue GaN/InGaN multi-quantum-well (MQW) micro-Light-Emitting Diodes (micro-LEDs) with diode dimensions ranging from 2 to 100 µm was prepared by masked dry etching and characterized by Photoluminescence (PL), Microcathodoluminescence (MCL), capacitance-voltage profiling in the dark and under monochromatic illumination, current-voltage measurements, admittance spectra, Deep Level Transient Spectroscopy with electrical (DLTS) and optical (ODLTS) injection. The changes observed in the PL, MCL spectra are due to the formation of deep hole traps at E_v+ 0.75 eV and electron traps at E_c-1 eV in the sidewalls of the micro-LEDs. The former give rise to the red defect band peaked near 600 nm and contribute to the increase of tunneling and leakage current with decreasing the diode diameter. The latter are prominent centers of nonradiative recombination.

Original language	English
Article number	166072
Journal	Journal of Alloys and Compounds
Volume	921
DOIs	https://doi.org/10.1016/j.jallcom.2022.166072
Publication status	Published - 2022 Nov 15

Bibliographical note

Funding Information:
The work at Korea University was supported by the Technology Innovation Program ( 20004479 , Micro LED chip and module fabrication technology with integrated field effect transistor for IoT application) funded by the Ministry of Trade, Industry and Energy ( MOTIE , Korea). . The work at NUST MISiS was supported by a grant from the Ministry of Science and Higher Education of the Russian Federation (Grant Application #220-7108-1760 )

Publisher Copyright:
© 2022 Elsevier B.V.

Keywords

Defects
Micro-LEDs
Recombination
Sidewalls
Traps

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2022.166072

Cite this

@article{d666a3a158ad4e41badf2afc2dd0e9b3,

title = "Degradation by sidewall recombination centers in GaN blue micro-LEDs at diameters<30 µm",

abstract = "A matrix of blue GaN/InGaN multi-quantum-well (MQW) micro-Light-Emitting Diodes (micro-LEDs) with diode dimensions ranging from 2 to 100 µm was prepared by masked dry etching and characterized by Photoluminescence (PL), Microcathodoluminescence (MCL), capacitance-voltage profiling in the dark and under monochromatic illumination, current-voltage measurements, admittance spectra, Deep Level Transient Spectroscopy with electrical (DLTS) and optical (ODLTS) injection. The changes observed in the PL, MCL spectra are due to the formation of deep hole traps at Ev+ 0.75 eV and electron traps at Ec-1 eV in the sidewalls of the micro-LEDs. The former give rise to the red defect band peaked near 600 nm and contribute to the increase of tunneling and leakage current with decreasing the diode diameter. The latter are prominent centers of nonradiative recombination.",

keywords = "Defects, Micro-LEDs, Recombination, Sidewalls, Traps",

author = "Lee, {In Hwan} and Kim, {Tae Hwan} and Polyakov, {A. Y.} and Chernykh, {A. V.} and Skorikov, {M. L.} and Yakimov, {E. B.} and Alexanyan, {L. A.} and Shchemerov, {I. V.} and Vasilev, {A. A.} and Pearton, {S. J.}",

note = "Funding Information: The work at Korea University was supported by the Technology Innovation Program ( 20004479 , Micro LED chip and module fabrication technology with integrated field effect transistor for IoT application) funded by the Ministry of Trade, Industry and Energy ( MOTIE , Korea). . The work at NUST MISiS was supported by a grant from the Ministry of Science and Higher Education of the Russian Federation (Grant Application #220-7108-1760 ) Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

month = nov,

day = "15",

doi = "10.1016/j.jallcom.2022.166072",

language = "English",

volume = "921",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier BV",

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TY - JOUR

T1 - Degradation by sidewall recombination centers in GaN blue micro-LEDs at diameters<30 µm

AU - Lee, In Hwan

AU - Kim, Tae Hwan

AU - Polyakov, A. Y.

AU - Chernykh, A. V.

AU - Skorikov, M. L.

AU - Yakimov, E. B.

AU - Alexanyan, L. A.

AU - Shchemerov, I. V.

AU - Vasilev, A. A.

AU - Pearton, S. J.

N1 - Funding Information: The work at Korea University was supported by the Technology Innovation Program ( 20004479 , Micro LED chip and module fabrication technology with integrated field effect transistor for IoT application) funded by the Ministry of Trade, Industry and Energy ( MOTIE , Korea). . The work at NUST MISiS was supported by a grant from the Ministry of Science and Higher Education of the Russian Federation (Grant Application #220-7108-1760 ) Publisher Copyright: © 2022 Elsevier B.V.

PY - 2022/11/15

Y1 - 2022/11/15

N2 - A matrix of blue GaN/InGaN multi-quantum-well (MQW) micro-Light-Emitting Diodes (micro-LEDs) with diode dimensions ranging from 2 to 100 µm was prepared by masked dry etching and characterized by Photoluminescence (PL), Microcathodoluminescence (MCL), capacitance-voltage profiling in the dark and under monochromatic illumination, current-voltage measurements, admittance spectra, Deep Level Transient Spectroscopy with electrical (DLTS) and optical (ODLTS) injection. The changes observed in the PL, MCL spectra are due to the formation of deep hole traps at Ev+ 0.75 eV and electron traps at Ec-1 eV in the sidewalls of the micro-LEDs. The former give rise to the red defect band peaked near 600 nm and contribute to the increase of tunneling and leakage current with decreasing the diode diameter. The latter are prominent centers of nonradiative recombination.

AB - A matrix of blue GaN/InGaN multi-quantum-well (MQW) micro-Light-Emitting Diodes (micro-LEDs) with diode dimensions ranging from 2 to 100 µm was prepared by masked dry etching and characterized by Photoluminescence (PL), Microcathodoluminescence (MCL), capacitance-voltage profiling in the dark and under monochromatic illumination, current-voltage measurements, admittance spectra, Deep Level Transient Spectroscopy with electrical (DLTS) and optical (ODLTS) injection. The changes observed in the PL, MCL spectra are due to the formation of deep hole traps at Ev+ 0.75 eV and electron traps at Ec-1 eV in the sidewalls of the micro-LEDs. The former give rise to the red defect band peaked near 600 nm and contribute to the increase of tunneling and leakage current with decreasing the diode diameter. The latter are prominent centers of nonradiative recombination.

KW - Defects

KW - Micro-LEDs

KW - Recombination

KW - Sidewalls

KW - Traps

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DO - 10.1016/j.jallcom.2022.166072

M3 - Article

AN - SCOPUS:85133161086

SN - 0925-8388

VL - 921

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

M1 - 166072

ER -

Degradation by sidewall recombination centers in GaN blue micro-LEDs at diameters<30 µm

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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