Degradation by sidewall recombination centers in GaN blue micro-LEDs at diameters<30 µm

In Hwan Lee, Tae Hwan Kim, A. Y. Polyakov, A. V. Chernykh, M. L. Skorikov, E. B. Yakimov, L. A. Alexanyan, I. V. Shchemerov, A. A. Vasilev, S. J. Pearton

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4 Citations (Scopus)


A matrix of blue GaN/InGaN multi-quantum-well (MQW) micro-Light-Emitting Diodes (micro-LEDs) with diode dimensions ranging from 2 to 100 µm was prepared by masked dry etching and characterized by Photoluminescence (PL), Microcathodoluminescence (MCL), capacitance-voltage profiling in the dark and under monochromatic illumination, current-voltage measurements, admittance spectra, Deep Level Transient Spectroscopy with electrical (DLTS) and optical (ODLTS) injection. The changes observed in the PL, MCL spectra are due to the formation of deep hole traps at Ev+ 0.75 eV and electron traps at Ec-1 eV in the sidewalls of the micro-LEDs. The former give rise to the red defect band peaked near 600 nm and contribute to the increase of tunneling and leakage current with decreasing the diode diameter. The latter are prominent centers of nonradiative recombination.

Original languageEnglish
Article number166072
JournalJournal of Alloys and Compounds
Publication statusPublished - 2022 Nov 15


  • Defects
  • Micro-LEDs
  • Recombination
  • Sidewalls
  • Traps

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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