Degradation pattern of SnO2 nanowire field effect transistors

Junhong Na; Junghwan Huh; Sung Chan Park; Daeil Kim; Dong Wook Kim; Jae Woo Lee; In Sung Hwang; Jong Heun Lee; Jeong Sook Ha; Gyu-Tae Kim

doi:10.1088/0957-4484/21/48/485201

Degradation pattern of SnO₂ nanowire field effect transistors

Junhong Na, Junghwan Huh, Sung Chan Park, Daeil Kim, Dong Wook Kim, Jae Woo Lee, In Sung Hwang, Jong Heun Lee, Jeong Sook Ha, Gyu-Tae Kim

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The degradation pattern of SnO₂ nanowire field effect transistors (FETs) was investigated by using an individual SnO₂ nanowire that was passivated in sections by either a PMMA (polymethylmethacrylate) or an Al₂O₃ layer. The PMMA passivated section showed the best mobility performance with a significant positive shift in the threshold voltage. The distinctive two-dimensional R _s-μ diagram based on a serial resistor connected FET model suggested that this would be a useful tool for evaluating the efficiency for post-treatments that would improve the device performance of a single nanowire transistor.

Original language	English
Article number	485201
Journal	Nanotechnology
Volume	21
Issue number	48
DOIs	https://doi.org/10.1088/0957-4484/21/48/485201
Publication status	Published - 2010 Dec 3

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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abstract = "The degradation pattern of SnO2 nanowire field effect transistors (FETs) was investigated by using an individual SnO2 nanowire that was passivated in sections by either a PMMA (polymethylmethacrylate) or an Al2O3 layer. The PMMA passivated section showed the best mobility performance with a significant positive shift in the threshold voltage. The distinctive two-dimensional R s-μ diagram based on a serial resistor connected FET model suggested that this would be a useful tool for evaluating the efficiency for post-treatments that would improve the device performance of a single nanowire transistor.",

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AU - Na, Junhong

AU - Huh, Junghwan

AU - Park, Sung Chan

AU - Kim, Daeil

AU - Kim, Dong Wook

AU - Lee, Jae Woo

AU - Hwang, In Sung

AU - Lee, Jong Heun

AU - Ha, Jeong Sook

AU - Kim, Gyu-Tae

PY - 2010/12/3

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Degradation pattern of SnO₂ nanowire field effect transistors

Abstract

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