Degradation pattern of SnO2 nanowire field effect transistors

Junhong Na; Junghwan Huh; Sung Chan Park; Daeil Kim; Dong Wook Kim; Jae Woo Lee; In Sung Hwang; Jong Heun Lee; Jeong Sook Ha; Gyu-Tae Kim

doi:10.1088/0957-4484/21/48/485201

Degradation pattern of SnO₂ nanowire field effect transistors

Junhong Na^*
, Junghwan Huh
, Sung Chan Park
, Daeil Kim
, Dong Wook Kim
, Jae Woo Lee
, In Sung Hwang
, Jong Heun Lee
, Jeong Sook Ha
, Gyu-Tae Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The degradation pattern of SnO₂ nanowire field effect transistors (FETs) was investigated by using an individual SnO₂ nanowire that was passivated in sections by either a PMMA (polymethylmethacrylate) or an Al₂O₃ layer. The PMMA passivated section showed the best mobility performance with a significant positive shift in the threshold voltage. The distinctive two-dimensional R _s-μ diagram based on a serial resistor connected FET model suggested that this would be a useful tool for evaluating the efficiency for post-treatments that would improve the device performance of a single nanowire transistor.

Original language	English
Article number	485201
Journal	Nanotechnology
Volume	21
Issue number	48
DOIs	https://doi.org/10.1088/0957-4484/21/48/485201
Publication status	Published - 2010 Dec 3

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1088/0957-4484/21/48/485201

Cite this

@article{ab76ea2b85584f6784e636c7974d06e1,

title = "Degradation pattern of SnO2 nanowire field effect transistors",

abstract = "The degradation pattern of SnO2 nanowire field effect transistors (FETs) was investigated by using an individual SnO2 nanowire that was passivated in sections by either a PMMA (polymethylmethacrylate) or an Al2O3 layer. The PMMA passivated section showed the best mobility performance with a significant positive shift in the threshold voltage. The distinctive two-dimensional R s-μ diagram based on a serial resistor connected FET model suggested that this would be a useful tool for evaluating the efficiency for post-treatments that would improve the device performance of a single nanowire transistor.",

author = "Junhong Na and Junghwan Huh and Park, \{Sung Chan\} and Daeil Kim and Kim, \{Dong Wook\} and Lee, \{Jae Woo\} and Hwang, \{In Sung\} and Lee, \{Jong Heun\} and Ha, \{Jeong Sook\} and Gyu-Tae Kim",

year = "2010",

month = dec,

day = "3",

doi = "10.1088/0957-4484/21/48/485201",

language = "English",

volume = "21",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "48",

}

TY - JOUR

T1 - Degradation pattern of SnO2 nanowire field effect transistors

AU - Na, Junhong

AU - Huh, Junghwan

AU - Park, Sung Chan

AU - Kim, Daeil

AU - Kim, Dong Wook

AU - Lee, Jae Woo

AU - Hwang, In Sung

AU - Lee, Jong Heun

AU - Ha, Jeong Sook

AU - Kim, Gyu-Tae

PY - 2010/12/3

Y1 - 2010/12/3

N2 - The degradation pattern of SnO2 nanowire field effect transistors (FETs) was investigated by using an individual SnO2 nanowire that was passivated in sections by either a PMMA (polymethylmethacrylate) or an Al2O3 layer. The PMMA passivated section showed the best mobility performance with a significant positive shift in the threshold voltage. The distinctive two-dimensional R s-μ diagram based on a serial resistor connected FET model suggested that this would be a useful tool for evaluating the efficiency for post-treatments that would improve the device performance of a single nanowire transistor.

AB - The degradation pattern of SnO2 nanowire field effect transistors (FETs) was investigated by using an individual SnO2 nanowire that was passivated in sections by either a PMMA (polymethylmethacrylate) or an Al2O3 layer. The PMMA passivated section showed the best mobility performance with a significant positive shift in the threshold voltage. The distinctive two-dimensional R s-μ diagram based on a serial resistor connected FET model suggested that this would be a useful tool for evaluating the efficiency for post-treatments that would improve the device performance of a single nanowire transistor.

UR - https://www.scopus.com/pages/publications/78650141011

U2 - 10.1088/0957-4484/21/48/485201

DO - 10.1088/0957-4484/21/48/485201

M3 - Article

C2 - 21051805

AN - SCOPUS:78650141011

SN - 0957-4484

VL - 21

JO - Nanotechnology

JF - Nanotechnology

IS - 48

M1 - 485201

ER -

Degradation pattern of SnO₂ nanowire field effect transistors

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this