Demonstration of nonpolar a -plane InGaN/GaN light emitting diode on r -plane sapphire substrate

Sung Min Hwang; Yong Gon Seo; Kwang Hyeon Baik; In Sung Cho; Jong Hyeob Baek; Sukkoo Jung; Tae Geun Kim; Meoungwhan Cho

doi:10.1063/1.3206666

Demonstration of nonpolar a -plane InGaN/GaN light emitting diode on r -plane sapphire substrate

Sung Min Hwang, Yong Gon Seo, Kwang Hyeon Baik, In Sung Cho, Jong Hyeob Baek, Sukkoo Jung, Tae Geun Kim, Meoungwhan Cho

Research output: Contribution to journal › Article › peer-review

91 Citations (Scopus)

Abstract

High crystalline a-plane (112̄0) GaN epitaxial layers with smooth surface morphology were grown on r -plane (11ō0) sapphire substrate by metalorganic chemical vapor deposition. The full width at half maximum of x-ray rocking curve was measured as 407 arc sec along c -axis direction, and the root mean square roughness was 1.23 nm. Nonpolar a -plane InGaN/GaN light emitting diodes were subsequently grown on a -plane GaN template, and the optical output power of 0.72 mW was obtained at drive current of 20 mA (3.36 V) and 2.84 mW at 100 mA (4.62 V) with the peak emission wavelength of 477 nm.

Original language	English
Article number	071101
Journal	Applied Physics Letters
Volume	95
Issue number	7
DOIs	https://doi.org/10.1063/1.3206666
Publication status	Published - 2009

Bibliographical note

Funding Information:
This work was supported by the IT R&D program (Project No. 2009-F-022-01) and the International Joint R&D Program (Project No. 10030797) by the Ministry of Knowledge Economy at Korea Electronics Technology Institute. We also would like to thank Crystal-on Inc. for the support with -plane sapphire.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3206666

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@article{26b6981a372e4b37ad2ccd03c6a32cd9,

title = "Demonstration of nonpolar a -plane InGaN/GaN light emitting diode on r -plane sapphire substrate",

abstract = "High crystalline a-plane (11{\=2}0) GaN epitaxial layers with smooth surface morphology were grown on r -plane (11ō0) sapphire substrate by metalorganic chemical vapor deposition. The full width at half maximum of x-ray rocking curve was measured as 407 arc sec along c -axis direction, and the root mean square roughness was 1.23 nm. Nonpolar a -plane InGaN/GaN light emitting diodes were subsequently grown on a -plane GaN template, and the optical output power of 0.72 mW was obtained at drive current of 20 mA (3.36 V) and 2.84 mW at 100 mA (4.62 V) with the peak emission wavelength of 477 nm.",

author = "Hwang, {Sung Min} and Seo, {Yong Gon} and Baik, {Kwang Hyeon} and Cho, {In Sung} and Baek, {Jong Hyeob} and Sukkoo Jung and Kim, {Tae Geun} and Meoungwhan Cho",

note = "Funding Information: This work was supported by the IT R&D program (Project No. 2009-F-022-01) and the International Joint R&D Program (Project No. 10030797) by the Ministry of Knowledge Economy at Korea Electronics Technology Institute. We also would like to thank Crystal-on Inc. for the support with -plane sapphire.",

year = "2009",

doi = "10.1063/1.3206666",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

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TY - JOUR

T1 - Demonstration of nonpolar a -plane InGaN/GaN light emitting diode on r -plane sapphire substrate

AU - Hwang, Sung Min

AU - Seo, Yong Gon

AU - Baik, Kwang Hyeon

AU - Cho, In Sung

AU - Baek, Jong Hyeob

AU - Jung, Sukkoo

AU - Kim, Tae Geun

AU - Cho, Meoungwhan

N1 - Funding Information: This work was supported by the IT R&D program (Project No. 2009-F-022-01) and the International Joint R&D Program (Project No. 10030797) by the Ministry of Knowledge Economy at Korea Electronics Technology Institute. We also would like to thank Crystal-on Inc. for the support with -plane sapphire.

PY - 2009

Y1 - 2009

N2 - High crystalline a-plane (112̄0) GaN epitaxial layers with smooth surface morphology were grown on r -plane (11ō0) sapphire substrate by metalorganic chemical vapor deposition. The full width at half maximum of x-ray rocking curve was measured as 407 arc sec along c -axis direction, and the root mean square roughness was 1.23 nm. Nonpolar a -plane InGaN/GaN light emitting diodes were subsequently grown on a -plane GaN template, and the optical output power of 0.72 mW was obtained at drive current of 20 mA (3.36 V) and 2.84 mW at 100 mA (4.62 V) with the peak emission wavelength of 477 nm.

AB - High crystalline a-plane (112̄0) GaN epitaxial layers with smooth surface morphology were grown on r -plane (11ō0) sapphire substrate by metalorganic chemical vapor deposition. The full width at half maximum of x-ray rocking curve was measured as 407 arc sec along c -axis direction, and the root mean square roughness was 1.23 nm. Nonpolar a -plane InGaN/GaN light emitting diodes were subsequently grown on a -plane GaN template, and the optical output power of 0.72 mW was obtained at drive current of 20 mA (3.36 V) and 2.84 mW at 100 mA (4.62 V) with the peak emission wavelength of 477 nm.

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U2 - 10.1063/1.3206666

DO - 10.1063/1.3206666

M3 - Article

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SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 071101

ER -

Demonstration of nonpolar a -plane InGaN/GaN light emitting diode on r -plane sapphire substrate

Abstract

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