Density effect of Ag/SiO2 core-shell nanoparticles on optical properties of InGaN/GaN light-emitting diodes

Seul Ki Moon; Soon Yong Kwon; Jin Hyeon Yun; In Hwan Lee; Jin Kyu Yang

doi:10.1117/1.OE.57.1.017111

Density effect of Ag/SiO₂ core-shell nanoparticles on optical properties of InGaN/GaN light-emitting diodes

Seul Ki Moon, Soon Yong Kwon, Jin Hyeon Yun, In Hwan Lee, Jin Kyu Yang

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We experimentally investigated the density effect of Ag/SiO2 core-shell nanoparticles (CSNPs) on the carrier recombination rate and photoluminescence (PL) of the InGaN/GaN light-emitting diodes (LEDs). For the high-efficiency InGaN/GaN blue LEDs, there was an optimum Ag/SiO2 CSNP density of about 15 μm-2. From the numerical simulations, the fast carrier recombination rate and the enhanced PL intensity are related to the enhancement of the Purcell factor and the light extraction efficiency due to the localized surface plasmon (LSP) mode. However, this plasmonic enhancement was limited at high Ag/SiO2 CSNP densities by the LSP resonance shift and ohmic loss. We expect that these results could be useful for the practical design of LSP-assisted optoelectronic devices such as LEDs, organic light-emitting diodes, and photovoltaics.

Original language	English
Article number	017111
Journal	Optical Engineering
Volume	57
Issue number	1
DOIs	https://doi.org/10.1117/1.OE.57.1.017111
Publication status	Published - 2018 Jan 1

Keywords

Purcell factor
carrier recombination rate
light extraction efficiency
light-emitting diodes
localized surface plasmon
photoluminescence

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Engineering(all)

Access to Document

10.1117/1.OE.57.1.017111

Cite this

@article{65b1b9472a3b4f85a519bff086a8d997,

title = "Density effect of Ag/SiO2 core-shell nanoparticles on optical properties of InGaN/GaN light-emitting diodes",

abstract = "We experimentally investigated the density effect of Ag/SiO2 core-shell nanoparticles (CSNPs) on the carrier recombination rate and photoluminescence (PL) of the InGaN/GaN light-emitting diodes (LEDs). For the high-efficiency InGaN/GaN blue LEDs, there was an optimum Ag/SiO2 CSNP density of about 15 μm-2. From the numerical simulations, the fast carrier recombination rate and the enhanced PL intensity are related to the enhancement of the Purcell factor and the light extraction efficiency due to the localized surface plasmon (LSP) mode. However, this plasmonic enhancement was limited at high Ag/SiO2 CSNP densities by the LSP resonance shift and ohmic loss. We expect that these results could be useful for the practical design of LSP-assisted optoelectronic devices such as LEDs, organic light-emitting diodes, and photovoltaics.",

keywords = "Purcell factor, carrier recombination rate, light extraction efficiency, light-emitting diodes, localized surface plasmon, photoluminescence",

author = "Moon, {Seul Ki} and Kwon, {Soon Yong} and Yun, {Jin Hyeon} and Lee, {In Hwan} and Yang, {Jin Kyu}",

note = "Funding Information: We thank Dr. L.-W. Jang for helpful comments. This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (2017R1A2B4012181). Publisher Copyright: {\textcopyright} 2018 Society of Photo-Optical Instrumentation Engineers (SPIE).",

year = "2018",

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doi = "10.1117/1.OE.57.1.017111",

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T1 - Density effect of Ag/SiO2 core-shell nanoparticles on optical properties of InGaN/GaN light-emitting diodes

AU - Moon, Seul Ki

AU - Kwon, Soon Yong

AU - Yun, Jin Hyeon

AU - Lee, In Hwan

AU - Yang, Jin Kyu

N1 - Funding Information: We thank Dr. L.-W. Jang for helpful comments. This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (2017R1A2B4012181). Publisher Copyright: © 2018 Society of Photo-Optical Instrumentation Engineers (SPIE).

PY - 2018/1/1

Y1 - 2018/1/1

N2 - We experimentally investigated the density effect of Ag/SiO2 core-shell nanoparticles (CSNPs) on the carrier recombination rate and photoluminescence (PL) of the InGaN/GaN light-emitting diodes (LEDs). For the high-efficiency InGaN/GaN blue LEDs, there was an optimum Ag/SiO2 CSNP density of about 15 μm-2. From the numerical simulations, the fast carrier recombination rate and the enhanced PL intensity are related to the enhancement of the Purcell factor and the light extraction efficiency due to the localized surface plasmon (LSP) mode. However, this plasmonic enhancement was limited at high Ag/SiO2 CSNP densities by the LSP resonance shift and ohmic loss. We expect that these results could be useful for the practical design of LSP-assisted optoelectronic devices such as LEDs, organic light-emitting diodes, and photovoltaics.

AB - We experimentally investigated the density effect of Ag/SiO2 core-shell nanoparticles (CSNPs) on the carrier recombination rate and photoluminescence (PL) of the InGaN/GaN light-emitting diodes (LEDs). For the high-efficiency InGaN/GaN blue LEDs, there was an optimum Ag/SiO2 CSNP density of about 15 μm-2. From the numerical simulations, the fast carrier recombination rate and the enhanced PL intensity are related to the enhancement of the Purcell factor and the light extraction efficiency due to the localized surface plasmon (LSP) mode. However, this plasmonic enhancement was limited at high Ag/SiO2 CSNP densities by the LSP resonance shift and ohmic loss. We expect that these results could be useful for the practical design of LSP-assisted optoelectronic devices such as LEDs, organic light-emitting diodes, and photovoltaics.

KW - Purcell factor

KW - carrier recombination rate

KW - light extraction efficiency

KW - light-emitting diodes

KW - localized surface plasmon

KW - photoluminescence

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