Density effect of Ag/SiO2 core-shell nanoparticles on optical properties of InGaN/GaN light-emitting diodes

Seul Ki Moon, Soon Yong Kwon, Jin Hyeon Yun, In Hwan Lee, Jin Kyu Yang

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We experimentally investigated the density effect of Ag/SiO2 core-shell nanoparticles (CSNPs) on the carrier recombination rate and photoluminescence (PL) of the InGaN/GaN light-emitting diodes (LEDs). For the high-efficiency InGaN/GaN blue LEDs, there was an optimum Ag/SiO2 CSNP density of about 15 μm-2. From the numerical simulations, the fast carrier recombination rate and the enhanced PL intensity are related to the enhancement of the Purcell factor and the light extraction efficiency due to the localized surface plasmon (LSP) mode. However, this plasmonic enhancement was limited at high Ag/SiO2 CSNP densities by the LSP resonance shift and ohmic loss. We expect that these results could be useful for the practical design of LSP-assisted optoelectronic devices such as LEDs, organic light-emitting diodes, and photovoltaics.

Original languageEnglish
Article number017111
JournalOptical Engineering
Issue number1
Publication statusPublished - 2018 Jan 1

Bibliographical note

Funding Information:
We thank Dr. L.-W. Jang for helpful comments. This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (2017R1A2B4012181).

Publisher Copyright:
© 2018 Society of Photo-Optical Instrumentation Engineers (SPIE).


  • Purcell factor
  • carrier recombination rate
  • light extraction efficiency
  • light-emitting diodes
  • localized surface plasmon
  • photoluminescence

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • General Engineering


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