Dependence of latch-up and threshold voltages on channel length in single-gated feedback field-effect transistor

Sola Woo; Sangsig Kim

doi:10.1088/1361-6641/ac7b3e

Dependence of latch-up and threshold voltages on channel length in single-gated feedback field-effect transistor

Sola Woo
, Sangsig Kim^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

This study demonstrates an optimal design method for the channel length in a p +-i-p-n + structure of feedback field-effect transistors (FBFETs) for next-generation memory devices. We demonstrate the dependence of latch-up and threshold voltages on the channel length in single-gated FBFETs with silicon channels consisting of gated and non-gated regions. The operation principle of the latch-up phenomena related to the channel length using an equivalent circuit in an FBFET has been described. The abrupt increase in the drain current of the single-gated FBFETs at the latch-up (threshold) voltage in the sweep of the drain (gate) voltage was analyzed with current gains in an equivalent circuit. The current gain depends on the gated and non-gated channel lengths; thereby, the latch-up and threshold voltages too depend on the gated and non-gated channel lengths. The dependences of the latch-up and threshold voltages on the non-gated channel length were found to be 3.62 times and 1.68 times higher than that on the gated channel length, respectively.

Original language	English
Article number	085016
Journal	Semiconductor Science and Technology
Volume	37
Issue number	8
DOIs	https://doi.org/10.1088/1361-6641/ac7b3e
Publication status	Published - 2022 Aug

Bibliographical note

Funding Information:
This research was supported in part by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (2020R1A2C3004538) and the Brain Korea 21 Plus Project in 2022.

Publisher Copyright:
© 2022 IOP Publishing Ltd.

Keywords

channel length variation
current gain
feedback field-effect transistors
latch-up mechanism
latch-up voltage
threshold voltage

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/1361-6641/ac7b3e

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title = "Dependence of latch-up and threshold voltages on channel length in single-gated feedback field-effect transistor",

abstract = "This study demonstrates an optimal design method for the channel length in a p +-i-p-n + structure of feedback field-effect transistors (FBFETs) for next-generation memory devices. We demonstrate the dependence of latch-up and threshold voltages on the channel length in single-gated FBFETs with silicon channels consisting of gated and non-gated regions. The operation principle of the latch-up phenomena related to the channel length using an equivalent circuit in an FBFET has been described. The abrupt increase in the drain current of the single-gated FBFETs at the latch-up (threshold) voltage in the sweep of the drain (gate) voltage was analyzed with current gains in an equivalent circuit. The current gain depends on the gated and non-gated channel lengths; thereby, the latch-up and threshold voltages too depend on the gated and non-gated channel lengths. The dependences of the latch-up and threshold voltages on the non-gated channel length were found to be 3.62 times and 1.68 times higher than that on the gated channel length, respectively.",

keywords = "channel length variation, current gain, feedback field-effect transistors, latch-up mechanism, latch-up voltage, threshold voltage",

author = "Sola Woo and Sangsig Kim",

note = "Funding Information: This research was supported in part by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (2020R1A2C3004538) and the Brain Korea 21 Plus Project in 2022. Publisher Copyright: {\textcopyright} 2022 IOP Publishing Ltd.",

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AU - Woo, Sola

AU - Kim, Sangsig

N1 - Funding Information: This research was supported in part by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (2020R1A2C3004538) and the Brain Korea 21 Plus Project in 2022. Publisher Copyright: © 2022 IOP Publishing Ltd.

PY - 2022/8

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N2 - This study demonstrates an optimal design method for the channel length in a p +-i-p-n + structure of feedback field-effect transistors (FBFETs) for next-generation memory devices. We demonstrate the dependence of latch-up and threshold voltages on the channel length in single-gated FBFETs with silicon channels consisting of gated and non-gated regions. The operation principle of the latch-up phenomena related to the channel length using an equivalent circuit in an FBFET has been described. The abrupt increase in the drain current of the single-gated FBFETs at the latch-up (threshold) voltage in the sweep of the drain (gate) voltage was analyzed with current gains in an equivalent circuit. The current gain depends on the gated and non-gated channel lengths; thereby, the latch-up and threshold voltages too depend on the gated and non-gated channel lengths. The dependences of the latch-up and threshold voltages on the non-gated channel length were found to be 3.62 times and 1.68 times higher than that on the gated channel length, respectively.

AB - This study demonstrates an optimal design method for the channel length in a p +-i-p-n + structure of feedback field-effect transistors (FBFETs) for next-generation memory devices. We demonstrate the dependence of latch-up and threshold voltages on the channel length in single-gated FBFETs with silicon channels consisting of gated and non-gated regions. The operation principle of the latch-up phenomena related to the channel length using an equivalent circuit in an FBFET has been described. The abrupt increase in the drain current of the single-gated FBFETs at the latch-up (threshold) voltage in the sweep of the drain (gate) voltage was analyzed with current gains in an equivalent circuit. The current gain depends on the gated and non-gated channel lengths; thereby, the latch-up and threshold voltages too depend on the gated and non-gated channel lengths. The dependences of the latch-up and threshold voltages on the non-gated channel length were found to be 3.62 times and 1.68 times higher than that on the gated channel length, respectively.

KW - channel length variation

KW - current gain

KW - feedback field-effect transistors

KW - latch-up mechanism

KW - latch-up voltage

KW - threshold voltage

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DO - 10.1088/1361-6641/ac7b3e

M3 - Article

AN - SCOPUS:85134679968

SN - 0268-1242

VL - 37

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 8

M1 - 085016

ER -

Dependence of latch-up and threshold voltages on channel length in single-gated feedback field-effect transistor

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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