Dependence of non-Abelian matrix Berry phase of a semiconductor quantum dot on geometric properties of adiabatic path

S. C. Kim; N. Y. Hwang; P. S. Park; Y. J. Kim; C. J. Lee; S. R.Eric Yang

doi:10.1142/s021797920805022x

Dependence of non-Abelian matrix Berry phase of a semiconductor quantum dot on geometric properties of adiabatic path

S. C. Kim, N. Y. Hwang, P. S. Park, Y. J. Kim, C. J. Lee, S. R.Eric Yang

Research output: Contribution to journal › Article › peer-review

Abstract

A matrix Berry phase can be generated and detected by all electric means in II-VI and III-V n-type semiconductor quantum dots by changing the shape of the confinement potential. This follows from general symmetry considerations in the presence of spin-orbit coupling terms. We explain these results and discuss how the matrix Berry phase depends on geometric properties of adiabatic paths. We suggest how the matrix Berry phase may be detected in transport measurements.

Original language	English
Pages (from-to)	4471-4481
Number of pages	11
Journal	International Journal of Modern Physics B
Volume	22
Issue number	25-26
DOIs	https://doi.org/10.1142/s021797920805022x
Publication status	Published - 2008 Oct 20

ASJC Scopus subject areas

Statistical and Nonlinear Physics
Condensed Matter Physics

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abstract = "A matrix Berry phase can be generated and detected by all electric means in II-VI and III-V n-type semiconductor quantum dots by changing the shape of the confinement potential. This follows from general symmetry considerations in the presence of spin-orbit coupling terms. We explain these results and discuss how the matrix Berry phase depends on geometric properties of adiabatic paths. We suggest how the matrix Berry phase may be detected in transport measurements.",

author = "Kim, {S. C.} and Hwang, {N. Y.} and Park, {P. S.} and Kim, {Y. J.} and Lee, {C. J.} and Yang, {S. R.Eric}",

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AU - Kim, Y. J.

AU - Lee, C. J.

AU - Yang, S. R.Eric

PY - 2008/10/20

Y1 - 2008/10/20

N2 - A matrix Berry phase can be generated and detected by all electric means in II-VI and III-V n-type semiconductor quantum dots by changing the shape of the confinement potential. This follows from general symmetry considerations in the presence of spin-orbit coupling terms. We explain these results and discuss how the matrix Berry phase depends on geometric properties of adiabatic paths. We suggest how the matrix Berry phase may be detected in transport measurements.

AB - A matrix Berry phase can be generated and detected by all electric means in II-VI and III-V n-type semiconductor quantum dots by changing the shape of the confinement potential. This follows from general symmetry considerations in the presence of spin-orbit coupling terms. We explain these results and discuss how the matrix Berry phase depends on geometric properties of adiabatic paths. We suggest how the matrix Berry phase may be detected in transport measurements.

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Dependence of non-Abelian matrix Berry phase of a semiconductor quantum dot on geometric properties of adiabatic path

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