Dependence of non-abelian matrix berry phase of a semiconductor quantum dot on geometric properties of adiabatic path

S. C. Kim, N. Y. Hwang, P. S. Park, Y. J. Kim, C. J. Lee, S. R. Eric Yang

    Research output: Chapter in Book/Report/Conference proceedingChapter

    Abstract

    A matrix Berry phase can be generated and detected by all electric means in II-VI and III-V n-type semiconductor quantum dots by changing the shape of the confinement potential. This follows from general symmetry considerations in the presence of spinorbit coupling terms. We explain these results and discuss how the matrix Berry phase depends on geometric properties of adiabatic paths. We suggest how the matrix Berry phase may be detected in transport measurements.

    Original languageEnglish
    Title of host publicationCondensed Matter Theories
    PublisherWorld Scientific Publishing Co.
    Pages183-193
    Number of pages11
    Volume23
    ISBN (Electronic)9789812836625
    ISBN (Print)9812836616, 9789812836618
    DOIs
    Publication statusPublished - 2008 Jan 1

    Bibliographical note

    Publisher Copyright:
    © 2009 by World Scientific Publishing Co. Pte. Ltd. All rights reserved.

    ASJC Scopus subject areas

    • General Chemistry
    • General Engineering
    • General Materials Science
    • General Physics and Astronomy

    Fingerprint

    Dive into the research topics of 'Dependence of non-abelian matrix berry phase of a semiconductor quantum dot on geometric properties of adiabatic path'. Together they form a unique fingerprint.

    Cite this