Dependence of non-abelian matrix berry phase of a semiconductor quantum dot on geometric properties of adiabatic path

S. C. Kim; N. Y. Hwang; P. S. Park; Y. J. Kim; C. J. Lee; S. R. Eric Yang

doi:10.1142/9789812836625_0019

Dependence of non-abelian matrix berry phase of a semiconductor quantum dot on geometric properties of adiabatic path

S. C. Kim, N. Y. Hwang, P. S. Park, Y. J. Kim, C. J. Lee, S. R. Eric Yang

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

A matrix Berry phase can be generated and detected by all electric means in II-VI and III-V n-type semiconductor quantum dots by changing the shape of the confinement potential. This follows from general symmetry considerations in the presence of spinorbit coupling terms. We explain these results and discuss how the matrix Berry phase depends on geometric properties of adiabatic paths. We suggest how the matrix Berry phase may be detected in transport measurements.

Original language	English
Title of host publication	Condensed Matter Theories
Publisher	World Scientific Publishing Co.
Pages	183-193
Number of pages	11
Volume	23
ISBN (Electronic)	9789812836625
ISBN (Print)	9812836616, 9789812836618
DOIs	https://doi.org/10.1142/9789812836625_0019
Publication status	Published - 2008 Jan 1

Bibliographical note

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© 2009 by World Scientific Publishing Co. Pte. Ltd. All rights reserved.

ASJC Scopus subject areas

General Chemistry
General Engineering
General Materials Science
General Physics and Astronomy

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abstract = "A matrix Berry phase can be generated and detected by all electric means in II-VI and III-V n-type semiconductor quantum dots by changing the shape of the confinement potential. This follows from general symmetry considerations in the presence of spinorbit coupling terms. We explain these results and discuss how the matrix Berry phase depends on geometric properties of adiabatic paths. We suggest how the matrix Berry phase may be detected in transport measurements.",

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Dependence of non-abelian matrix berry phase of a semiconductor quantum dot on geometric properties of adiabatic path

Abstract

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