Dependency of Si Content on the Performance of Amorphous SiZnSnO Thin Film Transistor Based Logic Circuits for Next-Generation Integrated Circuits

Byeong Hyeon Lee; Sangsig Kim; Sang Yeol Lee

doi:10.1007/s42341-019-00107-9

Dependency of Si Content on the Performance of Amorphous SiZnSnO Thin Film Transistor Based Logic Circuits for Next-Generation Integrated Circuits

Byeong Hyeon Lee, Sangsig Kim, Sang Yeol Lee

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

On the ZTO system, Si was found to be considered as an oxygen vacancy suppressor due to Si atom having high bonding strength with oxygen. The a-SZTO thin films fabricated with thin-film transistors showed a tendency of decreasing electrical properties as the Si content increased. In addition, various resistances, such as total resistance (R_t), contact resistance (R_c), and sheet resistance (R_sh) depending on Si content were analyzed using transmission line method. It was also found that R_sh was increased due to suppressing oxygen vacancies by Si atom. Threshold voltage can be controlled through simple adjustment of Si content and a NOT logic circuit is fabricated through this. In the fabricated two NOT logic circuits, high voltage gain of 11.86 and 9.23 was obtained at V_DD = 5 V, respectively. In addition, we found that even more complex NAND and NOR logic circuits work just like truth tables. Therefore, logic circuits fabricated according to simple Si content can be applied to next generation integrated circuits.

Original language	English
Pages (from-to)	175-180
Number of pages	6
Journal	Transactions on Electrical and Electronic Materials
Volume	20
Issue number	3
DOIs	https://doi.org/10.1007/s42341-019-00107-9
Publication status	Published - 2019 Jun 1

Bibliographical note

Publisher Copyright:
© 2019, The Korean Institute of Electrical and Electronic Material Engineers.

Keywords

Amorphous oxide semiconductor
Logic circuit
Thin film transistor
Transmission line method

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1007/s42341-019-00107-9

Cite this

@article{0722997dd5bc49c6a0632e60c43c360e,

title = "Dependency of Si Content on the Performance of Amorphous SiZnSnO Thin Film Transistor Based Logic Circuits for Next-Generation Integrated Circuits",

abstract = "On the ZTO system, Si was found to be considered as an oxygen vacancy suppressor due to Si atom having high bonding strength with oxygen. The a-SZTO thin films fabricated with thin-film transistors showed a tendency of decreasing electrical properties as the Si content increased. In addition, various resistances, such as total resistance (Rt), contact resistance (Rc), and sheet resistance (Rsh) depending on Si content were analyzed using transmission line method. It was also found that Rsh was increased due to suppressing oxygen vacancies by Si atom. Threshold voltage can be controlled through simple adjustment of Si content and a NOT logic circuit is fabricated through this. In the fabricated two NOT logic circuits, high voltage gain of 11.86 and 9.23 was obtained at VDD = 5 V, respectively. In addition, we found that even more complex NAND and NOR logic circuits work just like truth tables. Therefore, logic circuits fabricated according to simple Si content can be applied to next generation integrated circuits.",

keywords = "Amorphous oxide semiconductor, Logic circuit, Thin film transistor, Transmission line method",

author = "Lee, {Byeong Hyeon} and Sangsig Kim and Lee, {Sang Yeol}",

note = "Publisher Copyright: {\textcopyright} 2019, The Korean Institute of Electrical and Electronic Material Engineers.",

year = "2019",

month = jun,

day = "1",

doi = "10.1007/s42341-019-00107-9",

language = "English",

volume = "20",

pages = "175--180",

journal = "Transactions on Electrical and Electronic Materials",

issn = "1229-7607",

publisher = "The Korean Institute of Electrical and Electronic Material Engineers",

number = "3",

}

TY - JOUR

T1 - Dependency of Si Content on the Performance of Amorphous SiZnSnO Thin Film Transistor Based Logic Circuits for Next-Generation Integrated Circuits

AU - Lee, Byeong Hyeon

AU - Kim, Sangsig

AU - Lee, Sang Yeol

PY - 2019/6/1

Y1 - 2019/6/1

N2 - On the ZTO system, Si was found to be considered as an oxygen vacancy suppressor due to Si atom having high bonding strength with oxygen. The a-SZTO thin films fabricated with thin-film transistors showed a tendency of decreasing electrical properties as the Si content increased. In addition, various resistances, such as total resistance (Rt), contact resistance (Rc), and sheet resistance (Rsh) depending on Si content were analyzed using transmission line method. It was also found that Rsh was increased due to suppressing oxygen vacancies by Si atom. Threshold voltage can be controlled through simple adjustment of Si content and a NOT logic circuit is fabricated through this. In the fabricated two NOT logic circuits, high voltage gain of 11.86 and 9.23 was obtained at VDD = 5 V, respectively. In addition, we found that even more complex NAND and NOR logic circuits work just like truth tables. Therefore, logic circuits fabricated according to simple Si content can be applied to next generation integrated circuits.

AB - On the ZTO system, Si was found to be considered as an oxygen vacancy suppressor due to Si atom having high bonding strength with oxygen. The a-SZTO thin films fabricated with thin-film transistors showed a tendency of decreasing electrical properties as the Si content increased. In addition, various resistances, such as total resistance (Rt), contact resistance (Rc), and sheet resistance (Rsh) depending on Si content were analyzed using transmission line method. It was also found that Rsh was increased due to suppressing oxygen vacancies by Si atom. Threshold voltage can be controlled through simple adjustment of Si content and a NOT logic circuit is fabricated through this. In the fabricated two NOT logic circuits, high voltage gain of 11.86 and 9.23 was obtained at VDD = 5 V, respectively. In addition, we found that even more complex NAND and NOR logic circuits work just like truth tables. Therefore, logic circuits fabricated according to simple Si content can be applied to next generation integrated circuits.

KW - Amorphous oxide semiconductor

KW - Logic circuit

KW - Thin film transistor

KW - Transmission line method

UR - http://www.scopus.com/inward/record.url?scp=85066622436&partnerID=8YFLogxK

U2 - 10.1007/s42341-019-00107-9

DO - 10.1007/s42341-019-00107-9

M3 - Article

AN - SCOPUS:85066622436

SN - 1229-7607

VL - 20

SP - 175

EP - 180

JO - Transactions on Electrical and Electronic Materials

JF - Transactions on Electrical and Electronic Materials

IS - 3

ER -

Dependency of Si Content on the Performance of Amorphous SiZnSnO Thin Film Transistor Based Logic Circuits for Next-Generation Integrated Circuits

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this