We investigate the influence of the ambient gas during thermal annealing on the photoluminescence (PL) properties of europium compound thin films on Si substrates. The films were deposited by radio-frequency magnetron sputtering and subsequently annealed in N2 or O2 ambient gas by rapid thermal annealing (RTA). The results of X-ray diffraction indicate that the resulting europium compound annealed in N2 ambient have several silicate phases such as EuSiO3 and Eu2SiO4 compared to those annealed in O2 ambient. The spectral results revealed that a broad luminescence associated with Eu2+ ions, with a maximum intensity at 600 nm and a FWHM of 110 nm, was observed from the thin film annealed at 1000 °C in N2 ambient. However, a series of narrow PL spectra from Eu3+ ions were observed from the film annealed in O2 ambient.
Bibliographical noteFunding Information:
Acknowledgement This work was supported by the Seoul Research and Business Development (R& BD) program and also by the Gwangju regional photonics research project by MOCIE.
- Europium silicate
- Rapid thermal annealing
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Mechanics of Materials
- Ceramics and Composites
- Materials Chemistry
- Electrical and Electronic Engineering