Depth-controllable ultra shallow indium gallium zinc oxide/gallium arsenide hetero junction diode

Seong Uk Yang, Seung Ha Choi, Jongtaek Lee, Jeehwan Kim, Woo Shik Jung, Hyun Yong Yu, Yonghan Roh, Jin Hong Park

Research output: Contribution to journalLetterpeer-review

4 Citations (Scopus)


One of the challenges for the III-V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow junction diode. In this letter, we demonstrate a junction depth-controllable ultra-shallow (15 nm) n-IGZO/p-GaAs hetero-junction diode at a low temperature (300 °C). Through TOF-SIMS, J-V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs junctions are carefully investigated. Oncurrent density (0.02 A/cm2) and on/off-current ratio (4 × 102) were obtained in the junction annealed at 300 °C. Additionally, the effect of n-IGZO thickness control on junction current is investigated, comparing 15 nm and 30 nm thick n-IGZO samples.

Original languageEnglish
Pages (from-to)228-230
Number of pages3
JournalJournal of Alloys and Compounds
Publication statusPublished - 2013 Jun 5

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology ( NRF-2011-0007997 ).


  • Gallium arsenide
  • Hetero-junction
  • IGZO

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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