Abstract
One of the challenges for the III-V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow junction diode. In this letter, we demonstrate a junction depth-controllable ultra-shallow (15 nm) n-IGZO/p-GaAs hetero-junction diode at a low temperature (300 °C). Through TOF-SIMS, J-V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs junctions are carefully investigated. Oncurrent density (0.02 A/cm2) and on/off-current ratio (4 × 102) were obtained in the junction annealed at 300 °C. Additionally, the effect of n-IGZO thickness control on junction current is investigated, comparing 15 nm and 30 nm thick n-IGZO samples.
Original language | English |
---|---|
Pages (from-to) | 228-230 |
Number of pages | 3 |
Journal | Journal of Alloys and Compounds |
Volume | 561 |
DOIs | |
Publication status | Published - 2013 Jun 5 |
Bibliographical note
Funding Information:This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology ( NRF-2011-0007997 ).
Keywords
- Gallium arsenide
- Hetero-junction
- IGZO
ASJC Scopus subject areas
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry