Depth-controllable ultra shallow indium gallium zinc oxide/gallium arsenide hetero junction diode

Seong Uk Yang, Seung Ha Choi, Jongtaek Lee, Jeehwan Kim, Woo Shik Jung, Hyun Yong Yu, Yonghan Roh, Jin Hong Park

    Research output: Contribution to journalLetterpeer-review

    4 Citations (Scopus)

    Abstract

    One of the challenges for the III-V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow junction diode. In this letter, we demonstrate a junction depth-controllable ultra-shallow (15 nm) n-IGZO/p-GaAs hetero-junction diode at a low temperature (300 °C). Through TOF-SIMS, J-V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs junctions are carefully investigated. Oncurrent density (0.02 A/cm2) and on/off-current ratio (4 × 102) were obtained in the junction annealed at 300 °C. Additionally, the effect of n-IGZO thickness control on junction current is investigated, comparing 15 nm and 30 nm thick n-IGZO samples.

    Original languageEnglish
    Pages (from-to)228-230
    Number of pages3
    JournalJournal of Alloys and Compounds
    Volume561
    DOIs
    Publication statusPublished - 2013 Jun 5

    Bibliographical note

    Funding Information:
    This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology ( NRF-2011-0007997 ).

    Keywords

    • Gallium arsenide
    • Hetero-junction
    • IGZO

    ASJC Scopus subject areas

    • Mechanics of Materials
    • Mechanical Engineering
    • Metals and Alloys
    • Materials Chemistry

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