Depth-dependent optical properties of a HVPE-grown freestanding Si-doped GaN single crystal

Eui Kwan Koh; Il Woo Park; H. Choi; M. Yoon; Sung Ho Choh; Hang Sung Kim; Yong Min Cho; Sangsig Kim; Sung Soo Park

doi:10.1016/j.jcrysgro.2004.10.156

Depth-dependent optical properties of a HVPE-grown freestanding Si-doped GaN single crystal

Eui Kwan Koh, Il Woo Park, H. Choi, M. Yoon, Sung Ho Choh, Hang Sung Kim, Yong Min Cho, Sangsig Kim, Sung Soo Park

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Results of the cathodoluminescence (CL) and micro-Raman measurements in a freestanding 300 μm-thick Si-doped GaN single crystal grown by hydride vapor phase epitaxy (HVPE) are presented. The depth-dependent CL results along the c-axis on the cross-section show that the integrated CL intensities of the near-band-gap emission gradually increase with the CL linewidths broadened from the N face to the Ga face. The physical origin of increase in the CL intensity has been studied by the micro-Raman measurements along the c-axis, which revealed the carrier concentration gradually increases from 2.3×10 ¹⁷ (the N face) to 9.3×10¹⁷ cm^-3 (the Ga face). Our experimental evidence indicates that the broadening of the CL linewidth is due to the increased fluctuation of the local bandgap caused by the heavier concentration of the donor impurities.

Original language	English
Pages (from-to)	37-42
Number of pages	6
Journal	Journal of Crystal Growth
Volume	276
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.10.156
Publication status	Published - 2005 Mar 15

Keywords

A1. Cathodoluminescence
A1. Raman scattering
A3. Hydride vapor phase epitaxy
B1. GaN

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2004.10.156

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@article{cd652dc9cc10466ea3c19fe311a62890,

title = "Depth-dependent optical properties of a HVPE-grown freestanding Si-doped GaN single crystal",

abstract = "Results of the cathodoluminescence (CL) and micro-Raman measurements in a freestanding 300 μm-thick Si-doped GaN single crystal grown by hydride vapor phase epitaxy (HVPE) are presented. The depth-dependent CL results along the c-axis on the cross-section show that the integrated CL intensities of the near-band-gap emission gradually increase with the CL linewidths broadened from the N face to the Ga face. The physical origin of increase in the CL intensity has been studied by the micro-Raman measurements along the c-axis, which revealed the carrier concentration gradually increases from 2.3×10 17 (the N face) to 9.3×1017 cm-3 (the Ga face). Our experimental evidence indicates that the broadening of the CL linewidth is due to the increased fluctuation of the local bandgap caused by the heavier concentration of the donor impurities.",

keywords = "A1. Cathodoluminescence, A1. Raman scattering, A3. Hydride vapor phase epitaxy, B1. GaN",

author = "Koh, {Eui Kwan} and Park, {Il Woo} and H. Choi and M. Yoon and Choh, {Sung Ho} and Kim, {Hang Sung} and Cho, {Yong Min} and Sangsig Kim and Park, {Sung Soo}",

note = "Funding Information: This work has been supported by Korea Science and Engineering Foundation (KOSEF). ",

year = "2005",

month = mar,

day = "15",

doi = "10.1016/j.jcrysgro.2004.10.156",

language = "English",

volume = "276",

pages = "37--42",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - Depth-dependent optical properties of a HVPE-grown freestanding Si-doped GaN single crystal

AU - Koh, Eui Kwan

AU - Park, Il Woo

AU - Choi, H.

AU - Yoon, M.

AU - Choh, Sung Ho

AU - Kim, Hang Sung

AU - Cho, Yong Min

AU - Kim, Sangsig

AU - Park, Sung Soo

N1 - Funding Information: This work has been supported by Korea Science and Engineering Foundation (KOSEF).

PY - 2005/3/15

Y1 - 2005/3/15

N2 - Results of the cathodoluminescence (CL) and micro-Raman measurements in a freestanding 300 μm-thick Si-doped GaN single crystal grown by hydride vapor phase epitaxy (HVPE) are presented. The depth-dependent CL results along the c-axis on the cross-section show that the integrated CL intensities of the near-band-gap emission gradually increase with the CL linewidths broadened from the N face to the Ga face. The physical origin of increase in the CL intensity has been studied by the micro-Raman measurements along the c-axis, which revealed the carrier concentration gradually increases from 2.3×10 17 (the N face) to 9.3×1017 cm-3 (the Ga face). Our experimental evidence indicates that the broadening of the CL linewidth is due to the increased fluctuation of the local bandgap caused by the heavier concentration of the donor impurities.

AB - Results of the cathodoluminescence (CL) and micro-Raman measurements in a freestanding 300 μm-thick Si-doped GaN single crystal grown by hydride vapor phase epitaxy (HVPE) are presented. The depth-dependent CL results along the c-axis on the cross-section show that the integrated CL intensities of the near-band-gap emission gradually increase with the CL linewidths broadened from the N face to the Ga face. The physical origin of increase in the CL intensity has been studied by the micro-Raman measurements along the c-axis, which revealed the carrier concentration gradually increases from 2.3×10 17 (the N face) to 9.3×1017 cm-3 (the Ga face). Our experimental evidence indicates that the broadening of the CL linewidth is due to the increased fluctuation of the local bandgap caused by the heavier concentration of the donor impurities.

KW - A1. Cathodoluminescence

KW - A1. Raman scattering

KW - A3. Hydride vapor phase epitaxy

KW - B1. GaN

UR - http://www.scopus.com/inward/record.url?scp=20344391938&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.10.156

DO - 10.1016/j.jcrysgro.2004.10.156

M3 - Article

AN - SCOPUS:20344391938

SN - 0022-0248

VL - 276

SP - 37

EP - 42

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

Depth-dependent optical properties of a HVPE-grown freestanding Si-doped GaN single crystal

Abstract

Keywords

ASJC Scopus subject areas

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