Depth-resolved cathodoluminescence of III-V nitride films grown by plasma-assisted molecular beam epitaxy

Jae Min Myoung; Kyu Hwan Shim; Sangsig Kim

doi:10.1143/jjap.40.476

Depth-resolved cathodoluminescence of III-V nitride films grown by plasma-assisted molecular beam epitaxy

Jae Min Myoung, Kyu Hwan Shim, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The luminescence properties of III-V nitride films (an undoped GaN, an undoped GaN/Al_0.2Ga_0.8N multiquantum well, and a p-type Mg-doped GaN films) were investigated using the depth-resolved cathodoluminescence (CL) spectroscopy. From the low- and room-temperature CL of the undoped GaN and GaN/AlGaN MQW films, an emission at 2.9eV was found with the longer penetration depth and is attributed to the higher density of dislocations at the interface between the film and the substrate. In order to explain the depth-resolved CL of the Mg-doped GaN film, the configuration coordinate model is proposed on the basis of the local strain near the Mg impurities. This model demonstrates that local strain may play a crucial role in controlling the radiative efficiency, line width, and peak position of the luminescence from the film.

Original language	English
Pages (from-to)	476-479
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	2 A
DOIs	https://doi.org/10.1143/jjap.40.476
Publication status	Published - 2001 Feb

Keywords

Cathodoluminescence (CL)
Configuration coordinate model
Group III-nitride
Plasma-assisted molecular beam epitaxy (PAMBE)
Strain

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.40.476

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title = "Depth-resolved cathodoluminescence of III-V nitride films grown by plasma-assisted molecular beam epitaxy",

abstract = "The luminescence properties of III-V nitride films (an undoped GaN, an undoped GaN/Al0.2Ga0.8N multiquantum well, and a p-type Mg-doped GaN films) were investigated using the depth-resolved cathodoluminescence (CL) spectroscopy. From the low- and room-temperature CL of the undoped GaN and GaN/AlGaN MQW films, an emission at 2.9eV was found with the longer penetration depth and is attributed to the higher density of dislocations at the interface between the film and the substrate. In order to explain the depth-resolved CL of the Mg-doped GaN film, the configuration coordinate model is proposed on the basis of the local strain near the Mg impurities. This model demonstrates that local strain may play a crucial role in controlling the radiative efficiency, line width, and peak position of the luminescence from the film.",

keywords = "Cathodoluminescence (CL), Configuration coordinate model, Group III-nitride, Plasma-assisted molecular beam epitaxy (PAMBE), Strain",

author = "Myoung, {Jae Min} and Shim, {Kyu Hwan} and Sangsig Kim",

year = "2001",

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T1 - Depth-resolved cathodoluminescence of III-V nitride films grown by plasma-assisted molecular beam epitaxy

AU - Myoung, Jae Min

AU - Shim, Kyu Hwan

AU - Kim, Sangsig

PY - 2001/2

Y1 - 2001/2

N2 - The luminescence properties of III-V nitride films (an undoped GaN, an undoped GaN/Al0.2Ga0.8N multiquantum well, and a p-type Mg-doped GaN films) were investigated using the depth-resolved cathodoluminescence (CL) spectroscopy. From the low- and room-temperature CL of the undoped GaN and GaN/AlGaN MQW films, an emission at 2.9eV was found with the longer penetration depth and is attributed to the higher density of dislocations at the interface between the film and the substrate. In order to explain the depth-resolved CL of the Mg-doped GaN film, the configuration coordinate model is proposed on the basis of the local strain near the Mg impurities. This model demonstrates that local strain may play a crucial role in controlling the radiative efficiency, line width, and peak position of the luminescence from the film.

AB - The luminescence properties of III-V nitride films (an undoped GaN, an undoped GaN/Al0.2Ga0.8N multiquantum well, and a p-type Mg-doped GaN films) were investigated using the depth-resolved cathodoluminescence (CL) spectroscopy. From the low- and room-temperature CL of the undoped GaN and GaN/AlGaN MQW films, an emission at 2.9eV was found with the longer penetration depth and is attributed to the higher density of dislocations at the interface between the film and the substrate. In order to explain the depth-resolved CL of the Mg-doped GaN film, the configuration coordinate model is proposed on the basis of the local strain near the Mg impurities. This model demonstrates that local strain may play a crucial role in controlling the radiative efficiency, line width, and peak position of the luminescence from the film.

KW - Cathodoluminescence (CL)

KW - Configuration coordinate model

KW - Group III-nitride

KW - Plasma-assisted molecular beam epitaxy (PAMBE)

KW - Strain

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 2 A

ER -

Depth-resolved cathodoluminescence of III-V nitride films grown by plasma-assisted molecular beam epitaxy

Abstract

Keywords

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