Design and analysis of Insulate Gate Bipolar Transistor (IGBT) with P+/SiO2 collector structure applicable to high voltage to 1700V

Han Sin Lee; Yo Han Kim; Ey Goo Kang; Man Young Sung

doi:10.1109/SMELEC.2006.381110

Design and analysis of Insulate Gate Bipolar Transistor (IGBT) with P+/SiO₂ collector structure applicable to high voltage to 1700V

Han Sin Lee, Yo Han Kim, Ey Goo Kang, Man Young Sung

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this paper, we propose a new structure that improves the on-state voltage drop along with the switching speed in Insulated Gate Bipolar Transistors(lGBTs), which is widely applied in high voltage semiconductors. The proposed structure is unique that the collector area is divided by SiO ₂ regions, whereas in existing IGBTs, the collector has a planar P+ structure. The process and device simulation results show remarkably improved on-state and switching characteristics. The current and electric field distributions indicate that the segmented collector structure increases the electric field near the SiO2 edge which leads to an increase in electron current and finally a decrease in on-state voltage drop to 30%-40%. Also, since the area of the P+ region decreases compared to existing structures, the hole injection decreases which leads to an improved switching speed to 30%.

Original language	English
Title of host publication	ICSE 2006
Subtitle of host publication	2006 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages	489-492
Number of pages	4
DOIs	https://doi.org/10.1109/SMELEC.2006.381110
Publication status	Published - 2006
Event	2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia Duration: 2006 Nov 29 → 2006 Dec 1

Publication series

Name	IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other	2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
Country/Territory	Malaysia
City	Kuala Lumpur
Period	06/11/29 → 06/12/1

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/SMELEC.2006.381110

Cite this

Lee, H. S., Kim, Y. H., Kang, E. G., & Sung, M. Y. (2006). Design and analysis of Insulate Gate Bipolar Transistor (IGBT) with P+/SiO₂ collector structure applicable to high voltage to 1700V. In ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings (pp. 489-492). Article 4266660 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2006.381110

Design and analysis of Insulate Gate Bipolar Transistor (IGBT) with P+/SiO₂ collector structure applicable to high voltage to 1700V. / Lee, Han Sin; Kim, Yo Han; Kang, Ey Goo et al.
ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings. 2006. p. 489-492 4266660 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, HS, Kim, YH, Kang, EG & Sung, MY 2006, Design and analysis of Insulate Gate Bipolar Transistor (IGBT) with P+/SiO₂ collector structure applicable to high voltage to 1700V. in ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings., 4266660, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, pp. 489-492, 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006, Kuala Lumpur, Malaysia, 06/11/29. https://doi.org/10.1109/SMELEC.2006.381110

Lee HS, Kim YH, Kang EG, Sung MY. Design and analysis of Insulate Gate Bipolar Transistor (IGBT) with P+/SiO₂ collector structure applicable to high voltage to 1700V. In ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings. 2006. p. 489-492. 4266660. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). doi: 10.1109/SMELEC.2006.381110

Lee, Han Sin ; Kim, Yo Han ; Kang, Ey Goo et al. / Design and analysis of Insulate Gate Bipolar Transistor (IGBT) with P+/SiO₂ collector structure applicable to high voltage to 1700V. ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings. 2006. pp. 489-492 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

@inproceedings{71d546a7b86e418885727f46560ba150,

title = "Design and analysis of Insulate Gate Bipolar Transistor (IGBT) with P+/SiO2 collector structure applicable to high voltage to 1700V",

abstract = "In this paper, we propose a new structure that improves the on-state voltage drop along with the switching speed in Insulated Gate Bipolar Transistors(lGBTs), which is widely applied in high voltage semiconductors. The proposed structure is unique that the collector area is divided by SiO 2 regions, whereas in existing IGBTs, the collector has a planar P+ structure. The process and device simulation results show remarkably improved on-state and switching characteristics. The current and electric field distributions indicate that the segmented collector structure increases the electric field near the SiO2 edge which leads to an increase in electron current and finally a decrease in on-state voltage drop to 30%-40%. Also, since the area of the P+ region decreases compared to existing structures, the hole injection decreases which leads to an improved switching speed to 30%.",

author = "Lee, {Han Sin} and Kim, {Yo Han} and Kang, {Ey Goo} and Sung, {Man Young}",

year = "2006",

doi = "10.1109/SMELEC.2006.381110",

language = "English",

isbn = "0780397312",

series = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

pages = "489--492",

booktitle = "ICSE 2006",

note = "2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 ; Conference date: 29-11-2006 Through 01-12-2006",

}

TY - GEN

T1 - Design and analysis of Insulate Gate Bipolar Transistor (IGBT) with P+/SiO2 collector structure applicable to high voltage to 1700V

AU - Lee, Han Sin

AU - Kim, Yo Han

AU - Kang, Ey Goo

AU - Sung, Man Young

PY - 2006

Y1 - 2006

N2 - In this paper, we propose a new structure that improves the on-state voltage drop along with the switching speed in Insulated Gate Bipolar Transistors(lGBTs), which is widely applied in high voltage semiconductors. The proposed structure is unique that the collector area is divided by SiO 2 regions, whereas in existing IGBTs, the collector has a planar P+ structure. The process and device simulation results show remarkably improved on-state and switching characteristics. The current and electric field distributions indicate that the segmented collector structure increases the electric field near the SiO2 edge which leads to an increase in electron current and finally a decrease in on-state voltage drop to 30%-40%. Also, since the area of the P+ region decreases compared to existing structures, the hole injection decreases which leads to an improved switching speed to 30%.

AB - In this paper, we propose a new structure that improves the on-state voltage drop along with the switching speed in Insulated Gate Bipolar Transistors(lGBTs), which is widely applied in high voltage semiconductors. The proposed structure is unique that the collector area is divided by SiO 2 regions, whereas in existing IGBTs, the collector has a planar P+ structure. The process and device simulation results show remarkably improved on-state and switching characteristics. The current and electric field distributions indicate that the segmented collector structure increases the electric field near the SiO2 edge which leads to an increase in electron current and finally a decrease in on-state voltage drop to 30%-40%. Also, since the area of the P+ region decreases compared to existing structures, the hole injection decreases which leads to an improved switching speed to 30%.

UR - http://www.scopus.com/inward/record.url?scp=35148874727&partnerID=8YFLogxK

U2 - 10.1109/SMELEC.2006.381110

DO - 10.1109/SMELEC.2006.381110

M3 - Conference contribution

AN - SCOPUS:35148874727

SN - 0780397312

SN - 9780780397316

T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

SP - 489

EP - 492

BT - ICSE 2006

T2 - 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006

Y2 - 29 November 2006 through 1 December 2006

ER -