Design and fabrication of InAs/GaAs quantum-dot resonant-cavity avalanche photodetectors

Dong Ho Kim; Cheong Hyun Roh; Hong Joo Song; Yeon Shik Choi; Cheol Koo Hahn; Hoon Kim; Jung Hyuk Koh; Tae Geun Kim

doi:10.1016/j.cap.2006.01.033

Design and fabrication of InAs/GaAs quantum-dot resonant-cavity avalanche photodetectors

Dong Ho Kim, Cheong Hyun Roh, Hong Joo Song, Yeon Shik Choi, Cheol Koo Hahn, Hoon Kim, Jung Hyuk Koh, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

InAs/GaAs quantum dot (QD) resonant-cavity avalanche photodetectors (RC-APD) operating at 1 μm were designed and fabricated. The structure of RC-APD was designed such that it would resonate with the light incident from the top mesa. The RC-APD was grown by solid-source molecular-beam epitaxy on a semi-insulating GaAs substrate. The area of the top mesa was 10 × 10 μm² and the absorbing region consisted of a 2.1 monolayer (ML) InAs QD layer sandwiched by two 75.5 nm-thick GaAs spacers. One of the RC-APDs exhibited a large gain factor M ∼100 and a low dark current of ∼10 nA at a breakdown voltage of ∼20 V.

Original language	English
Pages (from-to)	e172-e175
Journal	Current Applied Physics
Volume	6
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1016/j.cap.2006.01.033
Publication status	Published - 2006 Aug

Keywords

Avalanche photodetector
Molecular beam epitaxy
Near-IR (NIR)
Resonant-cavity

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2006.01.033

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@article{ccfacde0e9bf4867ae73dc54ce74e729,

title = "Design and fabrication of InAs/GaAs quantum-dot resonant-cavity avalanche photodetectors",

abstract = "InAs/GaAs quantum dot (QD) resonant-cavity avalanche photodetectors (RC-APD) operating at 1 μm were designed and fabricated. The structure of RC-APD was designed such that it would resonate with the light incident from the top mesa. The RC-APD was grown by solid-source molecular-beam epitaxy on a semi-insulating GaAs substrate. The area of the top mesa was 10 × 10 μm2 and the absorbing region consisted of a 2.1 monolayer (ML) InAs QD layer sandwiched by two 75.5 nm-thick GaAs spacers. One of the RC-APDs exhibited a large gain factor M ∼100 and a low dark current of ∼10 nA at a breakdown voltage of ∼20 V.",

keywords = "Avalanche photodetector, Molecular beam epitaxy, Near-IR (NIR), Resonant-cavity",

author = "Kim, {Dong Ho} and Roh, {Cheong Hyun} and Song, {Hong Joo} and Choi, {Yeon Shik} and Hahn, {Cheol Koo} and Hoon Kim and Koh, {Jung Hyuk} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported by Gyeonggi Next-generation Growth Engine Program, Korea and also partly supported by KOSEF through q-P si at Hanyang University, Korea.",

year = "2006",

month = aug,

doi = "10.1016/j.cap.2006.01.033",

language = "English",

volume = "6",

pages = "e172--e175",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "SUPPL. 1",

}

TY - JOUR

T1 - Design and fabrication of InAs/GaAs quantum-dot resonant-cavity avalanche photodetectors

AU - Kim, Dong Ho

AU - Roh, Cheong Hyun

AU - Song, Hong Joo

AU - Choi, Yeon Shik

AU - Hahn, Cheol Koo

AU - Kim, Hoon

AU - Koh, Jung Hyuk

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported by Gyeonggi Next-generation Growth Engine Program, Korea and also partly supported by KOSEF through q-P si at Hanyang University, Korea.

PY - 2006/8

Y1 - 2006/8

N2 - InAs/GaAs quantum dot (QD) resonant-cavity avalanche photodetectors (RC-APD) operating at 1 μm were designed and fabricated. The structure of RC-APD was designed such that it would resonate with the light incident from the top mesa. The RC-APD was grown by solid-source molecular-beam epitaxy on a semi-insulating GaAs substrate. The area of the top mesa was 10 × 10 μm2 and the absorbing region consisted of a 2.1 monolayer (ML) InAs QD layer sandwiched by two 75.5 nm-thick GaAs spacers. One of the RC-APDs exhibited a large gain factor M ∼100 and a low dark current of ∼10 nA at a breakdown voltage of ∼20 V.

AB - InAs/GaAs quantum dot (QD) resonant-cavity avalanche photodetectors (RC-APD) operating at 1 μm were designed and fabricated. The structure of RC-APD was designed such that it would resonate with the light incident from the top mesa. The RC-APD was grown by solid-source molecular-beam epitaxy on a semi-insulating GaAs substrate. The area of the top mesa was 10 × 10 μm2 and the absorbing region consisted of a 2.1 monolayer (ML) InAs QD layer sandwiched by two 75.5 nm-thick GaAs spacers. One of the RC-APDs exhibited a large gain factor M ∼100 and a low dark current of ∼10 nA at a breakdown voltage of ∼20 V.

KW - Avalanche photodetector

KW - Molecular beam epitaxy

KW - Near-IR (NIR)

KW - Resonant-cavity

UR - http://www.scopus.com/inward/record.url?scp=33746333840&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2006.01.033

DO - 10.1016/j.cap.2006.01.033

M3 - Article

AN - SCOPUS:33746333840

SN - 1567-1739

VL - 6

SP - e172-e175

JO - Current Applied Physics

JF - Current Applied Physics

IS - SUPPL. 1

ER -

Design and fabrication of InAs/GaAs quantum-dot resonant-cavity avalanche photodetectors

Abstract

Keywords

ASJC Scopus subject areas

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