Design and optimization of a 200 GHz SiGe HBT collector profile by TCAD

Andreas D. Stricker, Jeffrey B. Johnson, Greg Freeman, Jae Sung Rieh

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


A novel simulation assisted investigation was used to obtain the optimum collector design of a 200GHz silicon-germanium (SiGe) hetero junction bipolar transistor (HBT) for manufacturing. Technology computer aided design (TCAD) tools were applied in a stepwise methodology to explore the large and complex design space and to fully understand the tradeoffs between all relevant HBT performance parameters.

Original languageEnglish
Pages (from-to)324-329
Number of pages6
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 2004 Mar 15
Externally publishedYes


  • BJT
  • Collector doping profile
  • Design methodology
  • HBT
  • Hetero bipolar junction transistor
  • SiGe
  • TCAD

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • General Physics and Astronomy
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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