In this paper, the design of an active millimeterwave frequency doubler using an Si/SiGe heterojunction bipolar transistor (HBT) as the active device is studied. Simulations are made using a developed physics-based large-signal model for Si/SiGe HBT's, which includes thermal dependence. Despite the high-output operating frequency of the fabricated doubler being close to fmax 67 GHz for the Si/SiGe HBT, the conversion efficiency in a not completely optimized circuit is found to be better than -12 dB. The 3-dB bandwidth for the doubler is approximately 7.4%. These results are found to be comparable to a heterojunction field-effect transistor (HFET) doubler operating equally close to its fmax. Simulated results of the doubler performance with varied terminating impedances for the HBT are presented as design aids.
|Number of pages
|IEEE Transactions on Microwave Theory and Techniques
|5 PART 2
|Published - 1998
Bibliographical noteFunding Information:
Manuscript received November 5, 1996; revised September 6, 1997. This work was supported by the Swedish Board for Industrial and Technological Development (NUTEK) and by the ISS90 Foundation. The work of F. Beißwanger was supported under the state Baden–Württemberg program for the promotion of young-generation scientists. S. P. O. Bruce and A. Rydberg are with the Signals and Systems Group, Uppsala University, S-75120 Uppsala, Sweden. M. Kim is with the Jet Propulsion Laboratory, Pasadena CA 91109 USA. F. J. Beißwanger is with TEMIC Semiconductor GmbH, 74025 Heilbronn, Germany. J.-F. Luy is with Daimler-Benz Research, Microwave Techniques, D-89081 Ulm, Germany. H. Schumacher and U. Erben are with the Department of Electron Devices and Circuits, University of Ulm, D-89069 Ulm, Germany. M. Willander is with the Department of Physics, Göteborg University and Chalmers University of Technology, Gothenburg S-41296 Sweden. M. Karlsteen is with Chalmers University of Technology, Gothenburg S-41296 Sweden. Publisher Item Identifier S 0018-9480(98)03382-1.
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering