Design and realization of a millimeter-wave Si/SiGe HBT frequency multiplier

Staffan P.O. Bruce; Anders Rydberg; Moonil Kim; Frank J. Beißwanger; J. F. Luy; Hermann Schumacher; Uwe Erben; Magnus Willander; Magnus Karlsteen

doi:10.1109/22.668684

Design and realization of a millimeter-wave Si/SiGe HBT frequency multiplier

Staffan P.O. Bruce, Anders Rydberg, Moonil Kim, Frank J. Beißwanger, J. F. Luy, Hermann Schumacher, Uwe Erben, Magnus Willander, Magnus Karlsteen

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

In this paper, the design of an active millimeterwave frequency doubler using an Si/SiGe heterojunction bipolar transistor (HBT) as the active device is studied. Simulations are made using a developed physics-based large-signal model for Si/SiGe HBT's, which includes thermal dependence. Despite the high-output operating frequency of the fabricated doubler being close to f_max 67 GHz for the Si/SiGe HBT, the conversion efficiency in a not completely optimized circuit is found to be better than -12 dB. The 3-dB bandwidth for the doubler is approximately 7.4%. These results are found to be comparable to a heterojunction field-effect transistor (HFET) doubler operating equally close to its f_max. Simulated results of the doubler performance with varied terminating impedances for the HBT are presented as design aids.

Original language	English
Pages (from-to)	695-700
Number of pages	6
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	46
Issue number	5 PART 2
DOIs	https://doi.org/10.1109/22.668684
Publication status	Published - 1998

Bibliographical note

Funding Information:
Manuscript received November 5, 1996; revised September 6, 1997. This work was supported by the Swedish Board for Industrial and Technological Development (NUTEK) and by the ISS90 Foundation. The work of F. Beißwanger was supported under the state Baden–Württemberg program for the promotion of young-generation scientists. S. P. O. Bruce and A. Rydberg are with the Signals and Systems Group, Uppsala University, S-75120 Uppsala, Sweden. M. Kim is with the Jet Propulsion Laboratory, Pasadena CA 91109 USA. F. J. Beißwanger is with TEMIC Semiconductor GmbH, 74025 Heilbronn, Germany. J.-F. Luy is with Daimler-Benz Research, Microwave Techniques, D-89081 Ulm, Germany. H. Schumacher and U. Erben are with the Department of Electron Devices and Circuits, University of Ulm, D-89069 Ulm, Germany. M. Willander is with the Department of Physics, Göteborg University and Chalmers University of Technology, Gothenburg S-41296 Sweden. M. Karlsteen is with Chalmers University of Technology, Gothenburg S-41296 Sweden. Publisher Item Identifier S 0018-9480(98)03382-1.

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/22.668684

Cite this

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title = "Design and realization of a millimeter-wave Si/SiGe HBT frequency multiplier",

abstract = "In this paper, the design of an active millimeterwave frequency doubler using an Si/SiGe heterojunction bipolar transistor (HBT) as the active device is studied. Simulations are made using a developed physics-based large-signal model for Si/SiGe HBT's, which includes thermal dependence. Despite the high-output operating frequency of the fabricated doubler being close to fmax 67 GHz for the Si/SiGe HBT, the conversion efficiency in a not completely optimized circuit is found to be better than -12 dB. The 3-dB bandwidth for the doubler is approximately 7.4%. These results are found to be comparable to a heterojunction field-effect transistor (HFET) doubler operating equally close to its fmax. Simulated results of the doubler performance with varied terminating impedances for the HBT are presented as design aids.",

author = "Bruce, {Staffan P.O.} and Anders Rydberg and Moonil Kim and Bei{\ss}wanger, {Frank J.} and Luy, {J. F.} and Hermann Schumacher and Uwe Erben and Magnus Willander and Magnus Karlsteen",

note = "Funding Information: Manuscript received November 5, 1996; revised September 6, 1997. This work was supported by the Swedish Board for Industrial and Technological Development (NUTEK) and by the ISS90 Foundation. The work of F. Bei{\ss}wanger was supported under the state Baden–W{\"u}rttemberg program for the promotion of young-generation scientists. S. P. O. Bruce and A. Rydberg are with the Signals and Systems Group, Uppsala University, S-75120 Uppsala, Sweden. M. Kim is with the Jet Propulsion Laboratory, Pasadena CA 91109 USA. F. J. Bei{\ss}wanger is with TEMIC Semiconductor GmbH, 74025 Heilbronn, Germany. J.-F. Luy is with Daimler-Benz Research, Microwave Techniques, D-89081 Ulm, Germany. H. Schumacher and U. Erben are with the Department of Electron Devices and Circuits, University of Ulm, D-89069 Ulm, Germany. M. Willander is with the Department of Physics, G{\"o}teborg University and Chalmers University of Technology, Gothenburg S-41296 Sweden. M. Karlsteen is with Chalmers University of Technology, Gothenburg S-41296 Sweden. Publisher Item Identifier S 0018-9480(98)03382-1.",

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doi = "10.1109/22.668684",

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AU - Bruce, Staffan P.O.

AU - Rydberg, Anders

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AU - Luy, J. F.

AU - Schumacher, Hermann

AU - Erben, Uwe

AU - Willander, Magnus

AU - Karlsteen, Magnus

N1 - Funding Information: Manuscript received November 5, 1996; revised September 6, 1997. This work was supported by the Swedish Board for Industrial and Technological Development (NUTEK) and by the ISS90 Foundation. The work of F. Beißwanger was supported under the state Baden–Württemberg program for the promotion of young-generation scientists. S. P. O. Bruce and A. Rydberg are with the Signals and Systems Group, Uppsala University, S-75120 Uppsala, Sweden. M. Kim is with the Jet Propulsion Laboratory, Pasadena CA 91109 USA. F. J. Beißwanger is with TEMIC Semiconductor GmbH, 74025 Heilbronn, Germany. J.-F. Luy is with Daimler-Benz Research, Microwave Techniques, D-89081 Ulm, Germany. H. Schumacher and U. Erben are with the Department of Electron Devices and Circuits, University of Ulm, D-89069 Ulm, Germany. M. Willander is with the Department of Physics, Göteborg University and Chalmers University of Technology, Gothenburg S-41296 Sweden. M. Karlsteen is with Chalmers University of Technology, Gothenburg S-41296 Sweden. Publisher Item Identifier S 0018-9480(98)03382-1.

PY - 1998

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N2 - In this paper, the design of an active millimeterwave frequency doubler using an Si/SiGe heterojunction bipolar transistor (HBT) as the active device is studied. Simulations are made using a developed physics-based large-signal model for Si/SiGe HBT's, which includes thermal dependence. Despite the high-output operating frequency of the fabricated doubler being close to fmax 67 GHz for the Si/SiGe HBT, the conversion efficiency in a not completely optimized circuit is found to be better than -12 dB. The 3-dB bandwidth for the doubler is approximately 7.4%. These results are found to be comparable to a heterojunction field-effect transistor (HFET) doubler operating equally close to its fmax. Simulated results of the doubler performance with varied terminating impedances for the HBT are presented as design aids.

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ER -

Design and realization of a millimeter-wave Si/SiGe HBT frequency multiplier

Abstract

Bibliographical note

ASJC Scopus subject areas

UN SDGs

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