Design and simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH quantum dot laser diode

Trevor Chan; Sung Hun Son; Kyoung Chan Kim; Tae Geun Kim

doi:10.3807/JOSK.2011.15.2.124

Design and simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH quantum dot laser diode

Trevor Chan, Sung Hun Son, Kyoung Chan Kim, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Quantum dots were designed within a GRIN-SCH(Graded index - Separate confinement Heterostructure) heterostructure to create a high power InAlAs/AlGaAs laser diode. 808 nm light emission was with a quantum dot composition of In0.665Al0.335As and wetting layer composition of Al0.2Ga0.8As by LASTIP simulation software. Typical characteristics of GRIN structures such as high confinement ratios and Gaussian beam profiles were shown to still apply when quantum dots are used as the active media. With a dot density of 1.0x1011 dots/cm², two quantum dot layers were found to be good enough for low threshold, high-power laser applications.

Original language	English
Pages (from-to)	124-127
Number of pages	4
Journal	Journal of the Optical Society of Korea
Volume	15
Issue number	2
DOIs	https://doi.org/10.3807/JOSK.2011.15.2.124
Publication status	Published - 2011 Jun

Keywords

InAlAs/AlGaAs
Quantum dot laser
Separate confinement hetero structure

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.3807/JOSK.2011.15.2.124

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title = "Design and simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH quantum dot laser diode",

abstract = "Quantum dots were designed within a GRIN-SCH(Graded index - Separate confinement Heterostructure) heterostructure to create a high power InAlAs/AlGaAs laser diode. 808 nm light emission was with a quantum dot composition of In0.665Al0.335As and wetting layer composition of Al0.2Ga0.8As by LASTIP simulation software. Typical characteristics of GRIN structures such as high confinement ratios and Gaussian beam profiles were shown to still apply when quantum dots are used as the active media. With a dot density of 1.0x1011 dots/cm2, two quantum dot layers were found to be good enough for low threshold, high-power laser applications.",

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author = "Trevor Chan and Son, {Sung Hun} and Kim, {Kyoung Chan} and Kim, {Tae Geun}",

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AU - Chan, Trevor

AU - Son, Sung Hun

AU - Kim, Kyoung Chan

AU - Kim, Tae Geun

PY - 2011/6

Y1 - 2011/6

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AB - Quantum dots were designed within a GRIN-SCH(Graded index - Separate confinement Heterostructure) heterostructure to create a high power InAlAs/AlGaAs laser diode. 808 nm light emission was with a quantum dot composition of In0.665Al0.335As and wetting layer composition of Al0.2Ga0.8As by LASTIP simulation software. Typical characteristics of GRIN structures such as high confinement ratios and Gaussian beam profiles were shown to still apply when quantum dots are used as the active media. With a dot density of 1.0x1011 dots/cm2, two quantum dot layers were found to be good enough for low threshold, high-power laser applications.

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Design and simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH quantum dot laser diode

Abstract

Keywords

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