Inverters for electric vehicle motor drive systems are essential in converting the battery's direct current into alternating current. Si(Silicon) IGBT that is commonly used in inverter modules have large Vce, sat and turn-off time due to p+ drain and tail current. Therefore, inverter modules consist of Si IGBT with relatively low efficiency. If we can use MOSFETs instead of IGBT in inverter modules, it is possible to achieve high efficiency because of short turn-off time and high operating frequency. Yet also has a problem; Si MOSFETs has large on-resistance compared to Si IGBTs. In this study, SiC(Silicon Carbide) was used to make MOSFETs instead of Si. Futhermore, an accumulation channel concept is adapted to a SiC trench MOSFET, namely Trench ACCUFET. Compared with conventional SiC trench MOSFETs, the novel SiC trench ACCUFET structure has not only lower on-resistance but also high breakdown voltage as shown by the simulation results. We fabricated the Trench ACCUFET for verification, and described improvements that is to be made.
|Title of host publication
|Proceedings of the International Symposium on Power Semiconductor Devices and ICs
|Institute of Electrical and Electronics Engineers Inc.
|Number of pages
|Published - 2014 Jan 1
|26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 - Waikoloa, HI, United States
Duration: 2014 Jun 15 → 2014 Jun 19
|26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
|14/6/15 → 14/6/19
ASJC Scopus subject areas
- General Engineering