Design of a novel SiC MOSFET structure for EV inverter efficiency improvement

Jong Seok Lee; Dae Hwan Chun; Jeong Hee Park; Young Kyun Jung; Ey Goo Kang; Man Young Sung

doi:10.1109/ISPSD.2014.6856031

Design of a novel SiC MOSFET structure for EV inverter efficiency improvement

Jong Seok Lee, Dae Hwan Chun, Jeong Hee Park, Young Kyun Jung, Ey Goo Kang, Man Young Sung

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Inverters for electric vehicle motor drive systems are essential in converting the battery's direct current into alternating current. Si(Silicon) IGBT that is commonly used in inverter modules have large V_{ce, sat} and turn-off time due to p+ drain and tail current. Therefore, inverter modules consist of Si IGBT with relatively low efficiency. If we can use MOSFETs instead of IGBT in inverter modules, it is possible to achieve high efficiency because of short turn-off time and high operating frequency. Yet also has a problem; Si MOSFETs has large on-resistance compared to Si IGBTs. In this study, SiC(Silicon Carbide) was used to make MOSFETs instead of Si. Futhermore, an accumulation channel concept is adapted to a SiC trench MOSFET, namely Trench ACCUFET. Compared with conventional SiC trench MOSFETs, the novel SiC trench ACCUFET structure has not only lower on-resistance but also high breakdown voltage as shown by the simulation results. We fabricated the Trench ACCUFET for verification, and described improvements that is to be made.

Original language	English
Title of host publication	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	281-284
Number of pages	4
ISBN (Print)	9781479929177
DOIs	https://doi.org/10.1109/ISPSD.2014.6856031
Publication status	Published - 2014 Jan 1
Event	26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 - Waikoloa, HI, United States Duration: 2014 Jun 15 → 2014 Jun 19

Other

Other	26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
Country/Territory	United States
City	Waikoloa, HI
Period	14/6/15 → 14/6/19

ASJC Scopus subject areas

Engineering(all)

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10.1109/ISPSD.2014.6856031

Cite this

Lee, J. S., Chun, D. H., Park, J. H., Jung, Y. K., Kang, E. G., & Sung, M. Y. (2014). Design of a novel SiC MOSFET structure for EV inverter efficiency improvement. In Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp. 281-284). [6856031] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2014.6856031

Design of a novel SiC MOSFET structure for EV inverter efficiency improvement. / Lee, Jong Seok; Chun, Dae Hwan; Park, Jeong Hee et al.
Proceedings of the International Symposium on Power Semiconductor Devices and ICs. Institute of Electrical and Electronics Engineers Inc., 2014. p. 281-284 6856031.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, JS, Chun, DH, Park, JH, Jung, YK, Kang, EG & Sung, MY 2014, Design of a novel SiC MOSFET structure for EV inverter efficiency improvement. in Proceedings of the International Symposium on Power Semiconductor Devices and ICs., 6856031, Institute of Electrical and Electronics Engineers Inc., pp. 281-284, 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014, Waikoloa, HI, United States, 14/6/15. https://doi.org/10.1109/ISPSD.2014.6856031

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abstract = "Inverters for electric vehicle motor drive systems are essential in converting the battery's direct current into alternating current. Si(Silicon) IGBT that is commonly used in inverter modules have large Vce, sat and turn-off time due to p+ drain and tail current. Therefore, inverter modules consist of Si IGBT with relatively low efficiency. If we can use MOSFETs instead of IGBT in inverter modules, it is possible to achieve high efficiency because of short turn-off time and high operating frequency. Yet also has a problem; Si MOSFETs has large on-resistance compared to Si IGBTs. In this study, SiC(Silicon Carbide) was used to make MOSFETs instead of Si. Futhermore, an accumulation channel concept is adapted to a SiC trench MOSFET, namely Trench ACCUFET. Compared with conventional SiC trench MOSFETs, the novel SiC trench ACCUFET structure has not only lower on-resistance but also high breakdown voltage as shown by the simulation results. We fabricated the Trench ACCUFET for verification, and described improvements that is to be made.",

author = "Lee, {Jong Seok} and Chun, {Dae Hwan} and Park, {Jeong Hee} and Jung, {Young Kyun} and Kang, {Ey Goo} and Sung, {Man Young}",

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AB - Inverters for electric vehicle motor drive systems are essential in converting the battery's direct current into alternating current. Si(Silicon) IGBT that is commonly used in inverter modules have large Vce, sat and turn-off time due to p+ drain and tail current. Therefore, inverter modules consist of Si IGBT with relatively low efficiency. If we can use MOSFETs instead of IGBT in inverter modules, it is possible to achieve high efficiency because of short turn-off time and high operating frequency. Yet also has a problem; Si MOSFETs has large on-resistance compared to Si IGBTs. In this study, SiC(Silicon Carbide) was used to make MOSFETs instead of Si. Futhermore, an accumulation channel concept is adapted to a SiC trench MOSFET, namely Trench ACCUFET. Compared with conventional SiC trench MOSFETs, the novel SiC trench ACCUFET structure has not only lower on-resistance but also high breakdown voltage as shown by the simulation results. We fabricated the Trench ACCUFET for verification, and described improvements that is to be made.

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Design of a novel SiC MOSFET structure for EV inverter efficiency improvement

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