Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes

Tae Hoon Park; Tae Geun Kim

doi:10.1007/s00339-015-9345-3

Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes

Tae Hoon Park, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In this paper, we designed and simulated InGaN/AlGaN-based near-ultraviolet light-emitting diode (NUV LED) epi-structures to obtain high internal quantum efficiency and low efficiency droop. When the conventional epi-structure of an $$\hbox {Al}_{0.1}\hbox {Gal}_{0.9}\hbox {N}$$Al0.1Gal0.9N last quantum barrier and an $$\hbox {Al}_{0.21}\hbox {Gal}_{0.79}\hbox {N}$$Al0.21Gal0.79N electron blocking layer (EBL) was replaced with a graded last quantum barrier and multi-step EBLs, the NUV LED showed 35 % higher internal quantum efficiency and 25 % more suppression of efficiency droop than the conventional NUV LED. Furthermore, a detailed study of the grading effect of the EBL revealed that 10-step EBLs increase performance when compared to other structures. These results are attributed to the polarization-induced effect, which reduces the electron leakage and increases the hole injection efficiency.

Original language	English
Pages (from-to)	841-846
Number of pages	6
Journal	Applied Physics A: Materials Science and Processing
Volume	120
Issue number	3
DOIs	https://doi.org/10.1007/s00339-015-9345-3
Publication status	Published - 2015 Jul 19

ASJC Scopus subject areas

Materials Science(all)
Chemistry(all)

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title = "Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes",

abstract = "In this paper, we designed and simulated InGaN/AlGaN-based near-ultraviolet light-emitting diode (NUV LED) epi-structures to obtain high internal quantum efficiency and low efficiency droop. When the conventional epi-structure of an $$\hbox {Al}_{0.1}\hbox {Gal}_{0.9}\hbox {N}$$Al0.1Gal0.9N last quantum barrier and an $$\hbox {Al}_{0.21}\hbox {Gal}_{0.79}\hbox {N}$$Al0.21Gal0.79N electron blocking layer (EBL) was replaced with a graded last quantum barrier and multi-step EBLs, the NUV LED showed 35 % higher internal quantum efficiency and 25 % more suppression of efficiency droop than the conventional NUV LED. Furthermore, a detailed study of the grading effect of the EBL revealed that 10-step EBLs increase performance when compared to other structures. These results are attributed to the polarization-induced effect, which reduces the electron leakage and increases the hole injection efficiency.",

author = "Park, {Tae Hoon} and Kim, {Tae Geun}",

year = "2015",

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doi = "10.1007/s00339-015-9345-3",

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T1 - Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes

AU - Park, Tae Hoon

AU - Kim, Tae Geun

PY - 2015/7/19

Y1 - 2015/7/19

N2 - In this paper, we designed and simulated InGaN/AlGaN-based near-ultraviolet light-emitting diode (NUV LED) epi-structures to obtain high internal quantum efficiency and low efficiency droop. When the conventional epi-structure of an $$\hbox {Al}_{0.1}\hbox {Gal}_{0.9}\hbox {N}$$Al0.1Gal0.9N last quantum barrier and an $$\hbox {Al}_{0.21}\hbox {Gal}_{0.79}\hbox {N}$$Al0.21Gal0.79N electron blocking layer (EBL) was replaced with a graded last quantum barrier and multi-step EBLs, the NUV LED showed 35 % higher internal quantum efficiency and 25 % more suppression of efficiency droop than the conventional NUV LED. Furthermore, a detailed study of the grading effect of the EBL revealed that 10-step EBLs increase performance when compared to other structures. These results are attributed to the polarization-induced effect, which reduces the electron leakage and increases the hole injection efficiency.

AB - In this paper, we designed and simulated InGaN/AlGaN-based near-ultraviolet light-emitting diode (NUV LED) epi-structures to obtain high internal quantum efficiency and low efficiency droop. When the conventional epi-structure of an $$\hbox {Al}_{0.1}\hbox {Gal}_{0.9}\hbox {N}$$Al0.1Gal0.9N last quantum barrier and an $$\hbox {Al}_{0.21}\hbox {Gal}_{0.79}\hbox {N}$$Al0.21Gal0.79N electron blocking layer (EBL) was replaced with a graded last quantum barrier and multi-step EBLs, the NUV LED showed 35 % higher internal quantum efficiency and 25 % more suppression of efficiency droop than the conventional NUV LED. Furthermore, a detailed study of the grading effect of the EBL revealed that 10-step EBLs increase performance when compared to other structures. These results are attributed to the polarization-induced effect, which reduces the electron leakage and increases the hole injection efficiency.

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JO - Applied Physics

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Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes

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