TY - JOUR
T1 - Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes
AU - Park, Tae Hoon
AU - Kim, Tae Geun
PY - 2015/7/19
Y1 - 2015/7/19
N2 - In this paper, we designed and simulated InGaN/AlGaN-based near-ultraviolet light-emitting diode (NUV LED) epi-structures to obtain high internal quantum efficiency and low efficiency droop. When the conventional epi-structure of an $$\hbox {Al}_{0.1}\hbox {Gal}_{0.9}\hbox {N}$$Al0.1Gal0.9N last quantum barrier and an $$\hbox {Al}_{0.21}\hbox {Gal}_{0.79}\hbox {N}$$Al0.21Gal0.79N electron blocking layer (EBL) was replaced with a graded last quantum barrier and multi-step EBLs, the NUV LED showed 35 % higher internal quantum efficiency and 25 % more suppression of efficiency droop than the conventional NUV LED. Furthermore, a detailed study of the grading effect of the EBL revealed that 10-step EBLs increase performance when compared to other structures. These results are attributed to the polarization-induced effect, which reduces the electron leakage and increases the hole injection efficiency.
AB - In this paper, we designed and simulated InGaN/AlGaN-based near-ultraviolet light-emitting diode (NUV LED) epi-structures to obtain high internal quantum efficiency and low efficiency droop. When the conventional epi-structure of an $$\hbox {Al}_{0.1}\hbox {Gal}_{0.9}\hbox {N}$$Al0.1Gal0.9N last quantum barrier and an $$\hbox {Al}_{0.21}\hbox {Gal}_{0.79}\hbox {N}$$Al0.21Gal0.79N electron blocking layer (EBL) was replaced with a graded last quantum barrier and multi-step EBLs, the NUV LED showed 35 % higher internal quantum efficiency and 25 % more suppression of efficiency droop than the conventional NUV LED. Furthermore, a detailed study of the grading effect of the EBL revealed that 10-step EBLs increase performance when compared to other structures. These results are attributed to the polarization-induced effect, which reduces the electron leakage and increases the hole injection efficiency.
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U2 - 10.1007/s00339-015-9345-3
DO - 10.1007/s00339-015-9345-3
M3 - Article
AN - SCOPUS:84938983944
SN - 0947-8396
VL - 120
SP - 841
EP - 846
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 3
ER -