Design of Ga2O3modulation doped field effect transistors

Michael A. Mastro, Marko J. Tadjer, Jihyun Kim, Fan Ren, Stephen J. Pearton

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


The design of β-Ga2O3-based modulation-doped field effect transistors is discussed with a focus on the role of self-heating and resultant modification of the electron mobility profile. Temperature- and doping-dependent model of the electron mobility as well as temperature- and orientation-dependent approximations of the thermal conductivity of β-Ga2O3 are presented. A decrease in drain current was attributed to a position-dependent mobility reduction caused by a coupled self-heating mechanism and a high electric-field mobility reduction mechanism. A simple thermal management solution is presented where heat is extracted through the source contact metal. Additionally, it is shown that an undesired secondary channel can form at the modulation-doped layer that is distinguished by an inflection in the transconductance curve.

Original languageEnglish
Article number023412
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number2
Publication statusPublished - 2021 Mar 1

Bibliographical note

Publisher Copyright:
© 2021 U.S. Government.

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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