Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry

Hyunsoo Kim; Kyoung Kook Kim; Kwang Ki Choi; Hyungkun Kim; June O. Song; Jaehee Cho; Kwang Hyeon Baik; Cheolsoo Sone; Yongjo Park; Tae Yeon Seong

doi:10.1063/1.2756139

Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry

Hyunsoo Kim, Kyoung Kook Kim, Kwang Ki Choi, Hyungkun Kim, June O. Song, Jaehee Cho, Kwang Hyeon Baik, Cheolsoo Sone, Yongjo Park, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

98 Citations (Scopus)

Abstract

The authors report on the design and fabrication of high-efficiency GaN-based light emitting diodes (LEDs) with vertical-injection geometry. Based on the analyses of LED test patterns fabricated with various n -electrode dimensions, a design rule for vertical LEDs is proposed. It is found that the suppression of the vertical current under n electrodes and the efficient injection of the spreading current across the n layers are essential to fabricate high-efficiency LEDs. Introduction of the current blocking layer along with well-designed branched n electrodes results in a large enhancement of power efficiency by a factor of 1.9, compared with that of reference LEDs.

Original language	English
Article number	023510
Journal	Applied Physics Letters
Volume	91
Issue number	2
DOIs	https://doi.org/10.1063/1.2756139
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2756139

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title = "Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry",

abstract = "The authors report on the design and fabrication of high-efficiency GaN-based light emitting diodes (LEDs) with vertical-injection geometry. Based on the analyses of LED test patterns fabricated with various n -electrode dimensions, a design rule for vertical LEDs is proposed. It is found that the suppression of the vertical current under n electrodes and the efficient injection of the spreading current across the n layers are essential to fabricate high-efficiency LEDs. Introduction of the current blocking layer along with well-designed branched n electrodes results in a large enhancement of power efficiency by a factor of 1.9, compared with that of reference LEDs.",

author = "Hyunsoo Kim and Kim, {Kyoung Kook} and Choi, {Kwang Ki} and Hyungkun Kim and Song, {June O.} and Jaehee Cho and Baik, {Kwang Hyeon} and Cheolsoo Sone and Yongjo Park and Seong, {Tae Yeon}",

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doi = "10.1063/1.2756139",

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AU - Kim, Hyunsoo

AU - Kim, Kyoung Kook

AU - Choi, Kwang Ki

AU - Kim, Hyungkun

AU - Song, June O.

AU - Cho, Jaehee

AU - Baik, Kwang Hyeon

AU - Sone, Cheolsoo

AU - Park, Yongjo

AU - Seong, Tae Yeon

PY - 2007

Y1 - 2007

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AB - The authors report on the design and fabrication of high-efficiency GaN-based light emitting diodes (LEDs) with vertical-injection geometry. Based on the analyses of LED test patterns fabricated with various n -electrode dimensions, a design rule for vertical LEDs is proposed. It is found that the suppression of the vertical current under n electrodes and the efficient injection of the spreading current across the n layers are essential to fabricate high-efficiency LEDs. Introduction of the current blocking layer along with well-designed branched n electrodes results in a large enhancement of power efficiency by a factor of 1.9, compared with that of reference LEDs.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry

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